Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

Seung Hwan Kim; Gwang Sik Kim; Sun Woo Kim; Hyun Yong Yu

doi:10.1149/07204.0321ecst

Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

Seung Hwan Kim, Gwang Sik Kim, Sun Woo Kim, Hyun Yong Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼10⁵ x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
Editors	F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. De Gendt
Publisher	Electrochemical Society Inc.
Pages	321-323
Number of pages	3
Edition	4
ISBN (Electronic)	9781607687146
DOIs	https://doi.org/10.1149/07204.0321ecst
Publication status	Published - 2016
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States Duration: 2016 May 29 → 2016 Jun 2

Publication series

Name	ECS Transactions
Number	4
Volume	72
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Country/Territory	United States
City	San Diego
Period	16/5/29 → 16/6/2

Bibliographical note

Funding Information:
This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning under Grant 2014R1A1A1036090.

Publisher Copyright:
©The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/07204.0321ecst

Cite this

Kim, S. H., Kim, G. S., Kim, S. W., & Yu, H. Y. (2016). Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. De Gendt (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., pp. 321-323). (ECS Transactions; Vol. 72, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0321ecst

Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. / Kim, Seung Hwan; Kim, Gwang Sik; Kim, Sun Woo et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. ed. / F. Roozeboom; V. Narayanan; K. Kakushima; P. J. Timans; E. P. Gusev; Z. Karim; S. De Gendt. 4. ed. Electrochemical Society Inc., 2016. p. 321-323 (ECS Transactions; Vol. 72, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, SH, Kim, GS, Kim, SW & Yu, HY 2016, Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. in F Roozeboom, V Narayanan, K Kakushima, PJ Timans, EP Gusev, Z Karim & S De Gendt (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 edn, ECS Transactions, no. 4, vol. 72, Electrochemical Society Inc., pp. 321-323, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting, San Diego, United States, 16/5/29. https://doi.org/10.1149/07204.0321ecst

Kim SH, Kim GS, Kim SW, Yu HY. Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. In Roozeboom F, Narayanan V, Kakushima K, Timans PJ, Gusev EP, Karim Z, De Gendt S, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 ed. Electrochemical Society Inc. 2016. p. 321-323. (ECS Transactions; 4). doi: 10.1149/07204.0321ecst

Kim, Seung Hwan ; Kim, Gwang Sik ; Kim, Sun Woo et al. / Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. editor / F. Roozeboom ; V. Narayanan ; K. Kakushima ; P. J. Timans ; E. P. Gusev ; Z. Karim ; S. De Gendt. 4. ed. Electrochemical Society Inc., 2016. pp. 321-323 (ECS Transactions; 4).

@inproceedings{745b80378ef54d48ab58b62c9c2f71e4,

title = "Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure",

abstract = "We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.",

author = "Kim, {Seung Hwan} and Kim, {Gwang Sik} and Kim, {Sun Woo} and Yu, {Hyun Yong}",

note = "Funding Information: This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning under Grant 2014R1A1A1036090. Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",

year = "2016",

doi = "10.1149/07204.0321ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "321--323",

editor = "F. Roozeboom and V. Narayanan and K. Kakushima and Timans, {P. J.} and Gusev, {E. P.} and Z. Karim and {De Gendt}, S.",

booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6",

edition = "4",

}

TY - GEN

T1 - Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

AU - Kim, Seung Hwan

AU - Kim, Gwang Sik

AU - Kim, Sun Woo

AU - Yu, Hyun Yong

N1 - Funding Information: This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning under Grant 2014R1A1A1036090. Publisher Copyright: ©The Electrochemical Society.

PY - 2016

Y1 - 2016

N2 - We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.

AB - We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.

UR - http://www.scopus.com/inward/record.url?scp=85010635531&partnerID=8YFLogxK

U2 - 10.1149/07204.0321ecst

DO - 10.1149/07204.0321ecst

M3 - Conference contribution

AN - SCOPUS:85010635531

T3 - ECS Transactions

SP - 321

EP - 323

BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

A2 - Roozeboom, F.

A2 - Narayanan, V.

A2 - Kakushima, K.

A2 - Timans, P. J.

A2 - Gusev, E. P.

A2 - Karim, Z.

A2 - De Gendt, S.

PB - Electrochemical Society Inc.

T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting

Y2 - 29 May 2016 through 2 June 2016

ER -

Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

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