Source/drain contact resistance reduction through Al-doped ZnO interlayer to metal-interlayer-GaAs contact structure

Seung Hwan Kim, Gwang Sik Kim, Sun Woo Kim, Hyun Yong Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We demonstrate a metal-interlayer-semiconductor structure for a non-alloyed source/drain ohmic contact by using a heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated by preventing the metal induced gap state. Finally, we achieved ∼105 x reduction of specific contact resistivity compared to the metal-semiconductor contact. For this reasons, the proposed contact is a promising non-alloyed source/drain ohmic contact for III-V semiconductor based devices.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
EditorsF. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. De Gendt
PublisherElectrochemical Society Inc.
Pages321-323
Number of pages3
Edition4
ISBN (Electronic)9781607687146
DOIs
Publication statusPublished - 2016
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Publication series

NameECS Transactions
Number4
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period16/5/2916/6/2

Bibliographical note

Funding Information:
This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning under Grant 2014R1A1A1036090.

Publisher Copyright:
©The Electrochemical Society.

ASJC Scopus subject areas

  • General Engineering

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