Space charge limited current and polarization in AlGaN/GaN nanowires

M. A. Mastro; H. Y. Kim; J. Ahn; J. Kim; J. K. Hite; C. R. Eddy

doi:10.1149/1.3629951

Space charge limited current and polarization in AlGaN/GaN nanowires

M. A. Mastro, H. Y. Kim, J. Ahn, J. Kim, J. K. Hite, C. R. Eddy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An undoped AlGaN/GaN nanowire displayed a transition at approximately 2V from Ohmic conduction at low drain-source voltage to space charge limited conduction at high drain-source voltage. Growth of the nanowire from a metal seed manifests as a triangular cross-section with one Ga-polar (0001) facet and two semi-polar {-110-1} facets. Conduction was based on a polarization induced two-dimensional electron gas that formed at the (0001) AlGaN/GaN interface. A simulation showed that the surface and the opposing polarization field at the semi-polar AlGaN/GaN interface will distort and reduce the carrier concentration at the (0001) AlGaN/GaN interface.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	33-38
Number of pages	6
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629951
Publication status	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 9 → 2011 Oct 14

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	11/10/9 → 11/10/14

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3629951

Cite this

Mastro, MA, Kim, HY, Ahn, J, Kim, J, Hite, JK & Eddy, CR 2011, Space charge limited current and polarization in AlGaN/GaN nanowires. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 33-38, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3629951

@inproceedings{115bae066c7341f2ba327787f724a58c,

title = "Space charge limited current and polarization in AlGaN/GaN nanowires",

abstract = "An undoped AlGaN/GaN nanowire displayed a transition at approximately 2V from Ohmic conduction at low drain-source voltage to space charge limited conduction at high drain-source voltage. Growth of the nanowire from a metal seed manifests as a triangular cross-section with one Ga-polar (0001) facet and two semi-polar {-110-1} facets. Conduction was based on a polarization induced two-dimensional electron gas that formed at the (0001) AlGaN/GaN interface. A simulation showed that the surface and the opposing polarization field at the semi-polar AlGaN/GaN interface will distort and reduce the carrier concentration at the (0001) AlGaN/GaN interface.",

author = "Mastro, {M. A.} and Kim, {H. Y.} and J. Ahn and J. Kim and Hite, {J. K.} and Eddy, {C. R.}",

year = "2011",

doi = "10.1149/1.3629951",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "33--38",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

TY - GEN

T1 - Space charge limited current and polarization in AlGaN/GaN nanowires

AU - Mastro, M. A.

AU - Kim, H. Y.

AU - Ahn, J.

AU - Kim, J.

AU - Hite, J. K.

AU - Eddy, C. R.

PY - 2011

Y1 - 2011

N2 - An undoped AlGaN/GaN nanowire displayed a transition at approximately 2V from Ohmic conduction at low drain-source voltage to space charge limited conduction at high drain-source voltage. Growth of the nanowire from a metal seed manifests as a triangular cross-section with one Ga-polar (0001) facet and two semi-polar {-110-1} facets. Conduction was based on a polarization induced two-dimensional electron gas that formed at the (0001) AlGaN/GaN interface. A simulation showed that the surface and the opposing polarization field at the semi-polar AlGaN/GaN interface will distort and reduce the carrier concentration at the (0001) AlGaN/GaN interface.

AB - An undoped AlGaN/GaN nanowire displayed a transition at approximately 2V from Ohmic conduction at low drain-source voltage to space charge limited conduction at high drain-source voltage. Growth of the nanowire from a metal seed manifests as a triangular cross-section with one Ga-polar (0001) facet and two semi-polar {-110-1} facets. Conduction was based on a polarization induced two-dimensional electron gas that formed at the (0001) AlGaN/GaN interface. A simulation showed that the surface and the opposing polarization field at the semi-polar AlGaN/GaN interface will distort and reduce the carrier concentration at the (0001) AlGaN/GaN interface.

UR - http://www.scopus.com/inward/record.url?scp=84863118888&partnerID=8YFLogxK

U2 - 10.1149/1.3629951

DO - 10.1149/1.3629951

M3 - Conference contribution

AN - SCOPUS:84863118888

SN - 9781566779067

T3 - ECS Transactions

SP - 33

EP - 38

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Space charge limited current and polarization in AlGaN/GaN nanowires

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this