TY - JOUR
T1 - Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers
AU - Tivakornsasithorn, Kritsanu
AU - Yoo, Taehee
AU - Lee, Hakjoon
AU - Choi, Seonghoon
AU - Lee, Sanghoon
AU - Liu, Xinyu
AU - Dobrowolska, M.
AU - Furdyna, Jacek K.
N1 - Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01056614); by Korea University through a grant; and by the National Science Foundation Grant DMR14-00432. K.T. acknowledges support from the National Research Foundation of Korea (NRF) through the NRF Postdoctoral Fellowship Program for Foreign Researchers.
Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2017/3/1
Y1 - 2017/3/1
N2 - Interlayer exchange coupling (IEC) between GaMnAs layers in GaMnAs/InGaAs/GaMnAs tri-layers was studied by magnetization measurements. Minor hysteresis loops are observed to shift in a direction indicating the presence of ferromagnetic (FM) IEC in the structures. The strength of the FM IEC clearly exhibits an exponential decrease with respect to nonmagnetic InGaAs spacer thickness. The fitting of the spacer thickness dependence of the FM IEC to an exponential decay function provides a decay length of 3.3±0.3 nm, which is relatively large compared to metallic multilayers, indicating a long ranged IEC in systems based on GaMnAs.
AB - Interlayer exchange coupling (IEC) between GaMnAs layers in GaMnAs/InGaAs/GaMnAs tri-layers was studied by magnetization measurements. Minor hysteresis loops are observed to shift in a direction indicating the presence of ferromagnetic (FM) IEC in the structures. The strength of the FM IEC clearly exhibits an exponential decrease with respect to nonmagnetic InGaAs spacer thickness. The fitting of the spacer thickness dependence of the FM IEC to an exponential decay function provides a decay length of 3.3±0.3 nm, which is relatively large compared to metallic multilayers, indicating a long ranged IEC in systems based on GaMnAs.
UR - http://www.scopus.com/inward/record.url?scp=85011411971&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2017.01.029
DO - 10.1016/j.ssc.2017.01.029
M3 - Article
AN - SCOPUS:85011411971
SN - 0038-1098
VL - 253
SP - 37
EP - 41
JO - Solid State Communications
JF - Solid State Communications
ER -