Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

In Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Cheol Koo Hahn, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

Original languageEnglish
Article number050602
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number5
Publication statusPublished - 2014 Sept 1
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2014 American Vacuum Society.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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