Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

In Hwan Lee; Alexander Y. Polyakov; Nikolai B. Smirnov; Cheol Koo Hahn; S. J. Pearton

doi:10.1116/1.4895840

Spatial location of the E_c-0.6 eV electron trap in AlGaN/GaN heterojunctions

In Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Cheol Koo Hahn, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

Original language	English
Article number	050602
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	32
Issue number	5
DOIs	https://doi.org/10.1116/1.4895840
Publication status	Published - 2014 Sept 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.",

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AU - Lee, In Hwan

AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Hahn, Cheol Koo

AU - Pearton, S. J.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

AB - Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

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Spatial location of the E_c-0.6 eV electron trap in AlGaN/GaN heterojunctions

Abstract

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