Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

In Hwan Lee; Alexander Y. Polyakov; Nikolai B. Smirnov; Cheol Koo Hahn; S. J. Pearton

doi:10.1116/1.4895840

Spatial location of the E_c-0.6 eV electron trap in AlGaN/GaN heterojunctions

In Hwan Lee
, Alexander Y. Polyakov
, Nikolai B. Smirnov
, Cheol Koo Hahn
, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

Original language	English
Article number	050602
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	32
Issue number	5
DOIs	https://doi.org/10.1116/1.4895840
Publication status	Published - 2014 Sept 1
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 American Vacuum Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.4895840

Cite this

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abstract = "Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.",

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AU - Lee, In Hwan

AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Hahn, Cheol Koo

AU - Pearton, S. J.

PY - 2014/9/1

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N2 - Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

AB - Deep trap spectra in AlGaN/GaN high electron mobility transistor (HEMT) structures were studied by capacitance deep level transient spectroscopy. A major trap with an ionization level near Ec-0.6 eV was detected and attributed to states in the GaN buffer close to the AlGaN interface. These states have a signature very similar to the previously reported traps in AlGaN/GaN HEMTs responsible for the device degradation under electric stress.

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