Specific contact resistivity reduction through Ar plasma-treated TiO2-x interfacial layer to metal/Ge contact

Gwang Sik Kim; Jeong Kyu Kim; Seung Hwan Kim; Jaesung Jo; Changhwan Shin; Jin Hong Park; Krishna C. Saraswat; Hyun Yong Yu

doi:10.1109/LED.2014.2354679

Specific contact resistivity reduction through Ar plasma-treated TiO_2-x interfacial layer to metal/Ge contact

Gwang Sik Kim, Jeong Kyu Kim, Seung Hwan Kim, Jaesung Jo, Changhwan Shin, Jin Hong Park, Krishna C. Saraswat, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO_2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10^-3 Ω · cm² on moderately doped n-type Ge substrate (6× 10¹⁶ cm^-3) was achieved, exhibiting (× 584) reduction from Ti/Ge structure, and (× 11) reduction from Ti/undoped TiO₂/Ge structure. A novel doping technique for TiO₂ interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.

Original language	English
Pages (from-to)	1076-1078
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1109/LED.2014.2354679
Publication status	Published - 2014 Nov 1

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

Ar plasma
Fermi-level unpinning
germanium
specific contact resistivity
titanium dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2014.2354679

Cite this

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title = "Specific contact resistivity reduction through Ar plasma-treated TiO2-x interfacial layer to metal/Ge contact",

abstract = "We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10-3 Ω · cm2 on moderately doped n-type Ge substrate (6× 1016 cm-3) was achieved, exhibiting (× 584) reduction from Ti/Ge structure, and (× 11) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.",

keywords = "Ar plasma, Fermi-level unpinning, germanium, specific contact resistivity, titanium dioxide",

author = "Kim, {Gwang Sik} and Kim, {Jeong Kyu} and Kim, {Seung Hwan} and Jaesung Jo and Changhwan Shin and Park, {Jin Hong} and Saraswat, {Krishna C.} and Yu, {Hyun Yong}",

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AU - Kim, Gwang Sik

AU - Kim, Jeong Kyu

AU - Kim, Seung Hwan

AU - Jo, Jaesung

AU - Shin, Changhwan

AU - Park, Jin Hong

AU - Saraswat, Krishna C.

AU - Yu, Hyun Yong

PY - 2014/11/1

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AB - We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10-3 Ω · cm2 on moderately doped n-type Ge substrate (6× 1016 cm-3) was achieved, exhibiting (× 584) reduction from Ti/Ge structure, and (× 11) reduction from Ti/undoped TiO2/Ge structure. A novel doping technique for TiO2 interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.

KW - Ar plasma

KW - Fermi-level unpinning

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KW - titanium dioxide

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