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Specific contact resistivity reduction through Ar plasma-treated TiO
2-x
interfacial layer to metal/Ge contact
Gwang Sik Kim
*
, Jeong Kyu Kim
, Seung Hwan Kim
, Jaesung Jo
,
Changhwan Shin
, Jin Hong Park
, Krishna C. Saraswat
,
Hyun Yong Yu
*
Corresponding author for this work
School of Electrical Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
40
Citations (Scopus)
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2-x
interfacial layer to metal/Ge contact'. Together they form a unique fingerprint.
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Keyphrases
Plasma Treatment
100%
Interfacial Layer
100%
Specific Contact Resistivity
100%
Germanium
100%
Ar Plasma
100%
TiO2-x
100%
Rutile
40%
Heavily Doped
20%
Low Temperature
20%
Undoped
20%
Contact Resistivity
20%
Contact Resistance
20%
Cm(III)
20%
NMOSFET
20%
Metal-semiconductor Contact
20%
Fermi Level pinning
20%
Doping Technique
20%
Germanium Substrate
20%
Material Science
Electrical Resistivity
100%
Titanium Dioxide
100%
Germanium
100%
Contact Resistance
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Engineering
Interfacial Layer
100%
Ar Plasma
100%
Low-Temperature
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Fermi Level
33%