The amphoteric nature of Si/ SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature "double peak" density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
Bibliographical noteFunding Information:
J.T.R. acknowledges funding support by the National Research Council. This work was partially prepared with the support of the U.S. Department of Commerce under Award No. NIST 60NANB10D109. However, any opinions, findings, conclusions or other recommendations expressed herein are those of the author(s) and do not necessarily reflect the views of the U.S. Commerce Dept.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)