Abstract
We report on the effect of the excimer laser annealing on the electronic properties of indium tin oxide (ITO) sol-gel films by using spectroscopic ellipsometric technique. We found that the excimer laser annealing effectively induces the crystallization as well as condensation of the sol-gel film. As the laser power increased, the carrier concentration and the relaxation time of photo-annealed films increased, with the bandgap shifting to higher energies. Simultaneously, the extinction coefficient values in the visible region were reduced significantly. We suggest that the excimer laser annealing should be a promising method for low temperature preparation of the ITO film on heat-sensitive substrates via the sol-gel process.
Original language | English |
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Pages (from-to) | 145-149 |
Number of pages | 5 |
Journal | Current Applied Physics |
Volume | 16 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2016 Feb 1 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MOE) ( NRF-2013R1A1A2012281 ) and ( MSIP ) ( NRF-2013R1A2A2A0106856 ). This work was supported by the 2014 Research Fund of the University of Seoul. A part of optical measurements were performed at Center for Correlated Electron Systems, IBS.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
Keywords
- Excimer laser annealing
- Indium tin oxide
- Sol-gel
- Spectroscopic ellipsometry
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy