Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

B. Jagannathan; D. Greenberg; D. I. Sanderson; J. S. Rieh; J. Pekarik; J. O. Plouchart; G. Freeman

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

B. Jagannathan, D. Greenberg, D. I. Sanderson, J. S. Rieh, J. Pekarik, J. O. Plouchart, G. Freeman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM s leading-edge production RFCMOS and BiCMOS technology s at 90 and 130nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.

Original language	English
Title of host publication	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publication	Digest of Papers
Editors	J.D. Cressler, J. Papapolymerou
Pages	115-118
Number of pages	4
Publication status	Published - 2004
Externally published	Yes
Event	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers - Atlanta, GA, United States Duration: 2004 Sept 8 → 2004 Sept 10

Publication series

Name	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Other

Other	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
Country/Territory	United States
City	Atlanta, GA
Period	04/9/8 → 04/9/10

Keywords

CMOS
F
F
Germanium
HBT
NF
Power
Silicon
nFET

ASJC Scopus subject areas

General Engineering

Cite this

Jagannathan, B., Greenberg, D., Sanderson, D. I., Rieh, J. S., Pekarik, J., Plouchart, J. O., & Freeman, G. (2004). Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors. In J. D. Cressler, & J. Papapolymerou (Eds.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers (pp. 115-118). (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors. / Jagannathan, B.; Greenberg, D.; Sanderson, D. I. et al.
2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. ed. / J.D. Cressler; J. Papapolymerou. 2004. p. 115-118 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jagannathan, B, Greenberg, D, Sanderson, DI, Rieh, JS, Pekarik, J, Plouchart, JO & Freeman, G 2004, Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors. in JD Cressler & J Papapolymerou (eds), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, pp. 115-118, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, Atlanta, GA, United States, 04/9/8.

Jagannathan B, Greenberg D, Sanderson DI, Rieh JS, Pekarik J, Plouchart JO et al. Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors. In Cressler JD, Papapolymerou J, editors, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004. p. 115-118. (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Jagannathan, B. ; Greenberg, D. ; Sanderson, D. I. et al. / Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. editor / J.D. Cressler ; J. Papapolymerou. 2004. pp. 115-118 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

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abstract = "In this study DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM s leading-edge production RFCMOS and BiCMOS technology s at 90 and 130nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.",

keywords = "CMOS, F, F, Germanium, HBT, NF, Power, Silicon, nFET",

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Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

Abstract

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Keywords

ASJC Scopus subject areas

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