Spin Hall effect in an inverted heterostructure

Hyun Cheol Koo; Seon Gu Huh; Jonghwa Eom; Hyunjung Yi; Joonyeon Chang; Suk Hee Han

doi:10.1109/NMDC.2006.4388778

Spin Hall effect in an inverted heterostructure

Hyun Cheol Koo
, Seon Gu Huh
, Jonghwa Eom
, Hyunjung Yi
, Joonyeon Chang
, Suk Hee Han

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spin-up and -down electrons experience skew scattering in a two-dimensional electron gas layer and two kinds of spin electrons deviate different directions due to the spin dependent deflection. If spin is randomly oriented, the number of scattered electrons on both sides will be same and the Hall voltage will read zero. In this experiment, the carrier concentrations of spin-up and -down are unbalanced because the spin is aligned by stray field from the ferromagnet. Therefore, the voltage probe reads charge accumulation asymmetry. Spin Hall voltage is functions of the spin alignment direction and the amount of spin polarization.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	384-385
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388778
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Skew scattering
Spin Hall effect
Spin accumulation
Spin dependent deflection
Stray field

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Materials Science

Access to Document

10.1109/NMDC.2006.4388778

Cite this

Koo, HC, Huh, SG, Eom, J, Yi, H, Chang, J & Han, SH 2006, Spin Hall effect in an inverted heterostructure. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388778, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 384-385, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388778

@inproceedings{cf3cc3ca23c647058dab8adbc4fecf7e,

title = "Spin Hall effect in an inverted heterostructure",

abstract = "Spin-up and -down electrons experience skew scattering in a two-dimensional electron gas layer and two kinds of spin electrons deviate different directions due to the spin dependent deflection. If spin is randomly oriented, the number of scattered electrons on both sides will be same and the Hall voltage will read zero. In this experiment, the carrier concentrations of spin-up and -down are unbalanced because the spin is aligned by stray field from the ferromagnet. Therefore, the voltage probe reads charge accumulation asymmetry. Spin Hall voltage is functions of the spin alignment direction and the amount of spin polarization.",

keywords = "Skew scattering, Spin Hall effect, Spin accumulation, Spin dependent deflection, Stray field",

author = "Koo, \{Hyun Cheol\} and Huh, \{Seon Gu\} and Jonghwa Eom and Hyunjung Yi and Joonyeon Chang and Han, \{Suk Hee\}",

year = "2006",

doi = "10.1109/NMDC.2006.4388778",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "384--385",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

TY - GEN

T1 - Spin Hall effect in an inverted heterostructure

AU - Koo, Hyun Cheol

AU - Huh, Seon Gu

AU - Eom, Jonghwa

AU - Yi, Hyunjung

AU - Chang, Joonyeon

AU - Han, Suk Hee

PY - 2006

Y1 - 2006

N2 - Spin-up and -down electrons experience skew scattering in a two-dimensional electron gas layer and two kinds of spin electrons deviate different directions due to the spin dependent deflection. If spin is randomly oriented, the number of scattered electrons on both sides will be same and the Hall voltage will read zero. In this experiment, the carrier concentrations of spin-up and -down are unbalanced because the spin is aligned by stray field from the ferromagnet. Therefore, the voltage probe reads charge accumulation asymmetry. Spin Hall voltage is functions of the spin alignment direction and the amount of spin polarization.

AB - Spin-up and -down electrons experience skew scattering in a two-dimensional electron gas layer and two kinds of spin electrons deviate different directions due to the spin dependent deflection. If spin is randomly oriented, the number of scattered electrons on both sides will be same and the Hall voltage will read zero. In this experiment, the carrier concentrations of spin-up and -down are unbalanced because the spin is aligned by stray field from the ferromagnet. Therefore, the voltage probe reads charge accumulation asymmetry. Spin Hall voltage is functions of the spin alignment direction and the amount of spin polarization.

KW - Skew scattering

KW - Spin Hall effect

KW - Spin accumulation

KW - Spin dependent deflection

KW - Stray field

UR - https://www.scopus.com/pages/publications/50249157982

U2 - 10.1109/NMDC.2006.4388778

DO - 10.1109/NMDC.2006.4388778

M3 - Conference contribution

AN - SCOPUS:50249157982

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 384

EP - 385

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Spin Hall effect in an inverted heterostructure

Abstract

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Keywords

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