Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel

Jin Seock Ma, Hyun Cheol Koo, Joonyeon Chang, Hyung Jun Kim, Suk Hee Han, Jonghwa Eom, Chulwoo Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length.

Original languageEnglish
Pages (from-to)1357-1361
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2008 Sept


  • Pd/CoFe multilayer
  • Spin Hall effect
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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