Spin Hall effect induced by a Pd/CoFe multilayer in a semiconductor channel

Jin Seock Ma, Hyun Cheol Koo, Joonyeon Chang, Hyung Jun Kim, Suk Hee Han, Jonghwa Eom, Chulwoo Kim

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length.

    Original languageEnglish
    Pages (from-to)1357-1361
    Number of pages5
    JournalJournal of the Korean Physical Society
    Volume53
    Issue number3
    DOIs
    Publication statusPublished - 2008 Sept

    Keywords

    • Pd/CoFe multilayer
    • Spin Hall effect
    • Two-dimensional electron gas

    ASJC Scopus subject areas

    • General Physics and Astronomy

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