Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates

Yun Suk Yang; Doo Seung Um; Youngsu Lee; JaeKyun Shin; Joonyeon Chang; Hyun Cheol Koo; Hyunhyub Ko; Hyung Jun Kim

doi:10.7567/APEX.7.093004

Spin injection and detection in In_0.53Ga_0.47As nanomembrane channels transferred onto Si substrates

Yun Suk Yang, Doo Seung Um, Youngsu Lee, JaeKyun Shin, Joonyeon Chang, Hyun Cheol Koo, Hyunhyub Ko, Hyung Jun Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigate the electrical spin injection and detection in In_0.53Ga^0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO₂/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In_0.53Ga_0.47As nanomembrane channels on SiO₂/Si substrates, we successfully observe the electrical detection of spin injection from Ni₈₁Fe₁₉ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.

Original language	English
Article number	093004
Journal	Applied Physics Express
Volume	7
Issue number	9
DOIs	https://doi.org/10.7567/APEX.7.093004
Publication status	Published - 2014 Jan 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates",

abstract = "We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.",

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T1 - Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates

AU - Yang, Yun Suk

AU - Um, Doo Seung

AU - Lee, Youngsu

AU - Shin, JaeKyun

AU - Chang, Joonyeon

AU - Koo, Hyun Cheol

AU - Ko, Hyunhyub

AU - Kim, Hyung Jun

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.

AB - We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.

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Spin injection and detection in In_0.53Ga_0.47As nanomembrane channels transferred onto Si substrates

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