Spin-orbit coupling in double-sided doped InAs quantum well structures

Kyung Ho Kim; Hyung Jun Kim; Hyun Cheol Koo; Joonyeon Chang; Suk Hee Han

doi:10.1063/1.3462325

Spin-orbit coupling in double-sided doped InAs quantum well structures

Kyung Ho Kim, Hyung Jun Kim, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We have investigated Rashba spin-orbit interaction [Bychkov and Rashba, JETP Lett. 39, 78 (1984)] parameter (α) in double-sided doped InAs quantum well structures of different potential asymmetries created by introducing two separated carrier supply layers. The internal potential asymmetry is manipulated between negative and positive potential gradient by adjusting the relative doping concentrations of the two carrier supply layers. The larger potential asymmetry results in the more extensive variation in α with respect to gate electric field (V_g). The structures of the negative and positive potential gradients exhibit the opposite variation in α with respect to V_g which evidently supports the fact that the sign of α can be changed by the reversed potential asymmetry.

Original language	English
Article number	012504
Journal	Applied Physics Letters
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.3462325
Publication status	Published - 2010 Jul 5

Bibliographical note

Funding Information:
This work was supported by the KIST Institutional Program and the KRCF DRC Program.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3462325

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title = "Spin-orbit coupling in double-sided doped InAs quantum well structures",

abstract = "We have investigated Rashba spin-orbit interaction [Bychkov and Rashba, JETP Lett. 39, 78 (1984)] parameter (α) in double-sided doped InAs quantum well structures of different potential asymmetries created by introducing two separated carrier supply layers. The internal potential asymmetry is manipulated between negative and positive potential gradient by adjusting the relative doping concentrations of the two carrier supply layers. The larger potential asymmetry results in the more extensive variation in α with respect to gate electric field (Vg). The structures of the negative and positive potential gradients exhibit the opposite variation in α with respect to Vg which evidently supports the fact that the sign of α can be changed by the reversed potential asymmetry.",

author = "Kim, {Kyung Ho} and Kim, {Hyung Jun} and Koo, {Hyun Cheol} and Joonyeon Chang and Han, {Suk Hee}",

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AU - Kim, Kyung Ho

AU - Kim, Hyung Jun

AU - Koo, Hyun Cheol

AU - Chang, Joonyeon

AU - Han, Suk Hee

N1 - Funding Information: This work was supported by the KIST Institutional Program and the KRCF DRC Program.

PY - 2010/7/5

Y1 - 2010/7/5

N2 - We have investigated Rashba spin-orbit interaction [Bychkov and Rashba, JETP Lett. 39, 78 (1984)] parameter (α) in double-sided doped InAs quantum well structures of different potential asymmetries created by introducing two separated carrier supply layers. The internal potential asymmetry is manipulated between negative and positive potential gradient by adjusting the relative doping concentrations of the two carrier supply layers. The larger potential asymmetry results in the more extensive variation in α with respect to gate electric field (Vg). The structures of the negative and positive potential gradients exhibit the opposite variation in α with respect to Vg which evidently supports the fact that the sign of α can be changed by the reversed potential asymmetry.

AB - We have investigated Rashba spin-orbit interaction [Bychkov and Rashba, JETP Lett. 39, 78 (1984)] parameter (α) in double-sided doped InAs quantum well structures of different potential asymmetries created by introducing two separated carrier supply layers. The internal potential asymmetry is manipulated between negative and positive potential gradient by adjusting the relative doping concentrations of the two carrier supply layers. The larger potential asymmetry results in the more extensive variation in α with respect to gate electric field (Vg). The structures of the negative and positive potential gradients exhibit the opposite variation in α with respect to Vg which evidently supports the fact that the sign of α can be changed by the reversed potential asymmetry.

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Spin-orbit coupling in double-sided doped InAs quantum well structures

Abstract

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