Spin-orbit coupling induced coercivity change at a ferromagnet-semiconductor interface

In a two-dimensional semiconductor channel with a structural asymmetry, a fast moving electron induces the Rashba spin-orbit interaction field. In order to observe the coercivity shift of the ferromagnet induced by the Rashba field, the ferromagnetic pattern is deposited on the Hall bar which is made of an InAs based quantum well layer. The Hall voltage can monitor the magnetization reversal of the Ni₈₁Fe₁₉ pattern using the stray field from the Ni₈₁Fe₁₉ pattern. The hysteresis curve of Ni₈₁Fe₁₉ is shifted by the Rashba field and with a bias current of 0.6 mA, the coercivity is shifted by 2.9 mT. The amount and direction of hysteresis shift depend on the current strength and polarity, respectively. These results clearly demonstrate that the Rashba field interferes with the ferromagnetic layer, while the low conductivity barrier is located between the ferromagnetic layer and the quantum well channel.