Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

Sanghoon Lee; Sangyeop Lee; Seul Ki Bac; Seonghoon Choi; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna

doi:10.1109/TMAG.2018.2862867

Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

Sanghoon Lee, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

Original language	English
Article number	2400206
Journal	IEEE Transactions on Magnetics
Volume	55
Issue number	2
DOIs	https://doi.org/10.1109/TMAG.2018.2862867
Publication status	Published - 2019 Feb

Keywords

Crystalline ferromagnetic films
magnetic anisotropy
planar Hall effect (PHE)
spin-orbit-induced (SOI) field

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2018.2862867

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title = "Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor",

abstract = "Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.",

keywords = "Crystalline ferromagnetic films, magnetic anisotropy, planar Hall effect (PHE), spin-orbit-induced (SOI) field",

author = "Sanghoon Lee and Sangyeop Lee and Bac, {Seul Ki} and Seonghoon Choi and Xinyu Liu and M. Dobrowolska and Furdyna, {Jacek K.}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Basic Science Research Program through the National Research Foundation of South Korea funded by the Ministry of Education under Grant 2018R1D1A1A02042965, in part by the Ministry of Science and ICT under Grant 2018R1A4A1024157, in part by the Korea University Grant, and in part by the National Science Foundation under Grant DMR 1400432. Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

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doi = "10.1109/TMAG.2018.2862867",

language = "English",

volume = "55",

journal = "IEEE Transactions on Magnetics",

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AU - Lee, Sanghoon

AU - Lee, Sangyeop

AU - Bac, Seul Ki

AU - Choi, Seonghoon

AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Basic Science Research Program through the National Research Foundation of South Korea funded by the Ministry of Education under Grant 2018R1D1A1A02042965, in part by the Ministry of Science and ICT under Grant 2018R1A4A1024157, in part by the Korea University Grant, and in part by the National Science Foundation under Grant DMR 1400432. Publisher Copyright: © 1965-2012 IEEE.

PY - 2019/2

Y1 - 2019/2

N2 - Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

AB - Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

KW - Crystalline ferromagnetic films

KW - magnetic anisotropy

KW - planar Hall effect (PHE)

KW - spin-orbit-induced (SOI) field

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DO - 10.1109/TMAG.2018.2862867

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

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ER -

Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

Abstract

Keywords

ASJC Scopus subject areas

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