Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

Sanghoon Lee, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.

Original languageEnglish
Article number2400206
JournalIEEE Transactions on Magnetics
Issue number2
Publication statusPublished - 2019 Feb


  • Crystalline ferromagnetic films
  • magnetic anisotropy
  • planar Hall effect (PHE)
  • spin-orbit-induced (SOI) field

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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