Spin-Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Changsoo Kim, Byong Sun Chun, Jungbum Yoon, Dongseuk Kim, Yong Jin Kim, In Ho Cha, Gyu Won Kim, Dae Hyun Kim, Kyoung Woong Moon, Young Keun Kim, Chanyong Hwang

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    The switching of magnetization via spin-orbit torque has attracted much attention because of its fast switching and low power consumption. Numerous studies have focused on increasing the conversion efficiency from charge to spin current and out-of-plane magnetization cases. Recently, there have been reports on the fast and deterministic switching of in-plane magnetization devices. It is reported that an in-plane spin-orbit torque (SOT) device can archive the oscillation, precession, and direct switching by a combination of torques—controlling the thickness of the ferromagnet and normal metal. With proper layer thicknesses, the device can show the three dynamics listed above at each current density in a macro spin simulation. Based on an understanding of the role of torque-driving magnetization dynamics, a dynamic map of an in-plane SOT device depending on torque efficiency and current density is shown.

    Original languageEnglish
    Article number1901004
    JournalAdvanced Electronic Materials
    Volume6
    Issue number2
    DOIs
    Publication statusPublished - 2020 Feb 1

    Bibliographical note

    Publisher Copyright:
    © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Keywords

    • magnetization switching
    • spin orbit torque
    • spin precession

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

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