Spin-Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures

Changsoo Kim, Byong Sun Chun, Jungbum Yoon, Dongseuk Kim, Yong Jin Kim, In Ho Cha, Gyu Won Kim, Dae Hyun Kim, Kyoung Woong Moon, Young Keun Kim, Chanyong Hwang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The switching of magnetization via spin-orbit torque has attracted much attention because of its fast switching and low power consumption. Numerous studies have focused on increasing the conversion efficiency from charge to spin current and out-of-plane magnetization cases. Recently, there have been reports on the fast and deterministic switching of in-plane magnetization devices. It is reported that an in-plane spin-orbit torque (SOT) device can archive the oscillation, precession, and direct switching by a combination of torques—controlling the thickness of the ferromagnet and normal metal. With proper layer thicknesses, the device can show the three dynamics listed above at each current density in a macro spin simulation. Based on an understanding of the role of torque-driving magnetization dynamics, a dynamic map of an in-plane SOT device depending on torque efficiency and current density is shown.

Original languageEnglish
Article number1901004
JournalAdvanced Electronic Materials
Volume6
Issue number2
DOIs
Publication statusPublished - 2020 Feb 1

Keywords

  • magnetization switching
  • spin orbit torque
  • spin precession

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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