Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Kyungmi Song, Kyung Jin Lee

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

Original languageEnglish
Article number053912
JournalJournal of Applied Physics
Volume118
Issue number5
DOIs
Publication statusPublished - 2015 Aug 7

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

  • General Physics and Astronomy

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