Abstract
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.
| Original language | English |
|---|---|
| Article number | 053912 |
| Journal | Journal of Applied Physics |
| Volume | 118 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2015 Aug 7 |
Bibliographical note
Publisher Copyright:© 2015 AIP Publishing LLC.
ASJC Scopus subject areas
- General Physics and Astronomy