Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Kyungmi Song; Kyung Jin Lee

doi:10.1063/1.4928205

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Kyungmi Song
, Kyung Jin Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

Original language	English
Article number	053912
Journal	Journal of Applied Physics
Volume	118
Issue number	5
DOIs	https://doi.org/10.1063/1.4928205
Publication status	Published - 2015 Aug 7

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4928205

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abstract = "We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.",

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AB - We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

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Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Abstract

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