Spin transport in a lateral spin-injection device with an FM/Si/FM junction

W. J. Hwang; H. J. Lee; K. I. Lee; Y. M. Kim; J. Y. Chang; S. H. Han; M. W. Shin; Y. K. Kim; W. Y. Lee

doi:10.1016/j.jmmm.2003.12.1169

Spin transport in a lateral spin-injection device with an FM/Si/FM junction

W. J. Hwang, H. J. Lee, K. I. Lee, Y. M. Kim, J. Y. Chang, S. H. Han, M. W. Shin, Y. K. Kim, W. Y. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

Original language	English
Pages (from-to)	1915-1916
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	III
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1169
Publication status	Published - 2004 May

Bibliographical note

Funding Information:
This work was supported by KIST Vision 21 Program.

Keywords

Hybrid ferromagnetic metal/semiconductor
Spin injection
Spin-polarized transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2003.12.1169

Cite this

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title = "Spin transport in a lateral spin-injection device with an FM/Si/FM junction",

abstract = "The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.",

keywords = "Hybrid ferromagnetic metal/semiconductor, Spin injection, Spin-polarized transport",

author = "Hwang, {W. J.} and Lee, {H. J.} and Lee, {K. I.} and Kim, {Y. M.} and Chang, {J. Y.} and Han, {S. H.} and Shin, {M. W.} and Kim, {Y. K.} and Lee, {W. Y.}",

note = "Funding Information: This work was supported by KIST Vision 21 Program.",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.1169",

language = "English",

volume = "272-276",

pages = "1915--1916",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "III",

}

TY - JOUR

T1 - Spin transport in a lateral spin-injection device with an FM/Si/FM junction

AU - Hwang, W. J.

AU - Lee, H. J.

AU - Lee, K. I.

AU - Kim, Y. M.

AU - Chang, J. Y.

AU - Han, S. H.

AU - Shin, M. W.

AU - Kim, Y. K.

AU - Lee, W. Y.

N1 - Funding Information: This work was supported by KIST Vision 21 Program.

PY - 2004/5

Y1 - 2004/5

N2 - The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

AB - The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

KW - Hybrid ferromagnetic metal/semiconductor

KW - Spin injection

KW - Spin-polarized transport

UR - http://www.scopus.com/inward/record.url?scp=23044479375&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.1169

DO - 10.1016/j.jmmm.2003.12.1169

M3 - Article

AN - SCOPUS:23044479375

SN - 0304-8853

VL - 272-276

SP - 1915

EP - 1916

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - III

ER -

Spin transport in a lateral spin-injection device with an FM/Si/FM junction

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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