Spin transport in a submicron-sized structure using Vanadium metal masks

Dong Seok Han; Hyun Cheol Koo; Sol Lee; Joonyeon Chang; Suk Hee Han; Eun Kyu Kim; Jonghwa Eom

doi:10.3938/jkps.55.207

Spin transport in a submicron-sized structure using Vanadium metal masks

Dong Seok Han, Hyun Cheol Koo, Sol Lee, Joonyeon Chang, Suk Hee Han, Eun Kyu Kim, Jonghwa Eom

Research output: Contribution to journal › Article › peer-review

Abstract

A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a AR of 4 mω is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.

Original language	English
Pages (from-to)	207-211
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.207
Publication status	Published - 2009 Jul
Externally published	Yes

Keywords

Spin accumulation
Spin diffusion
Two-dimensional electron gas
Vanadium metal mask

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.55.207

Cite this

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title = "Spin transport in a submicron-sized structure using Vanadium metal masks",

abstract = "A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a AR of 4 mω is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.",

keywords = "Spin accumulation, Spin diffusion, Two-dimensional electron gas, Vanadium metal mask",

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T1 - Spin transport in a submicron-sized structure using Vanadium metal masks

AU - Han, Dong Seok

AU - Koo, Hyun Cheol

AU - Lee, Sol

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Kim, Eun Kyu

AU - Eom, Jonghwa

PY - 2009/7

Y1 - 2009/7

N2 - A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a AR of 4 mω is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.

AB - A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a AR of 4 mω is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.

KW - Spin accumulation

KW - Spin diffusion

KW - Two-dimensional electron gas

KW - Vanadium metal mask

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Spin transport in a submicron-sized structure using Vanadium metal masks

Abstract

Keywords

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