Spin transport in an InAs based two-dimensional electron gas nanochannel

Hyunjung Yi; H. C. Koo; W. Y. Kim; Joonyeon Chang; S. H. Han; S. H. Lim

doi:10.1063/1.1852213

Spin transport in an InAs based two-dimensional electron gas nanochannel

Hyunjung Yi, H. C. Koo, W. Y. Kim, Joonyeon Chang, S. H. Han, S. H. Lim

Research output: Contribution to journal › Article › peer-review

Abstract

A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, ΔV=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method ΔV=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector.

Original language	English
Article number	10D502
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1852213
Publication status	Published - 2005 May 15

Bibliographical note

Funding Information:
This work was supported by the VISION 21 PROGRAM of KIST.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1852213

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title = "Spin transport in an InAs based two-dimensional electron gas nanochannel",

abstract = "A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, ΔV=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method ΔV=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector.",

author = "Hyunjung Yi and Koo, {H. C.} and Kim, {W. Y.} and Joonyeon Chang and Han, {S. H.} and Lim, {S. H.}",

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T1 - Spin transport in an InAs based two-dimensional electron gas nanochannel

AU - Yi, Hyunjung

AU - Koo, H. C.

AU - Kim, W. Y.

AU - Chang, Joonyeon

AU - Han, S. H.

AU - Lim, S. H.

N1 - Funding Information: This work was supported by the VISION 21 PROGRAM of KIST.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, ΔV=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method ΔV=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector.

AB - A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, ΔV=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method ΔV=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector.

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DO - 10.1063/1.1852213

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VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

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Spin transport in an InAs based two-dimensional electron gas nanochannel

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