Spin-valve effect in an FM/Si/FM junction

K. I. Lee; H. J. Lee; J. Y. Chang; S. H. Han; Y. K. Kim; Woo Young Lee

doi:10.1007/s10854-005-6590-9

Spin-valve effect in an FM/Si/FM junction

K. I. Lee, H. J. Lee, J. Y. Chang, S. H. Han, Y. K. Kim, Woo Young Lee

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original language	English
Pages (from-to)	131-133
Number of pages	3
Journal	Journal of Materials Science: Materials in Electronics
Volume	16
Issue number	3
DOIs	https://doi.org/10.1007/s10854-005-6590-9
Publication status	Published - 2005 Mar

Bibliographical note

Funding Information:
This work was supported by KIST Vision 21 Program.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-005-6590-9

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title = "Spin-valve effect in an FM/Si/FM junction",

abstract = "The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.",

author = "Lee, {K. I.} and Lee, {H. J.} and Chang, {J. Y.} and Han, {S. H.} and Kim, {Y. K.} and Lee, {Woo Young}",

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doi = "10.1007/s10854-005-6590-9",

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AU - Lee, K. I.

AU - Lee, H. J.

AU - Chang, J. Y.

AU - Han, S. H.

AU - Kim, Y. K.

AU - Lee, Woo Young

N1 - Funding Information: This work was supported by KIST Vision 21 Program.

PY - 2005/3

Y1 - 2005/3

N2 - The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

AB - The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

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Spin-valve effect in an FM/Si/FM junction

Abstract

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