Spintronic materials & devices

Lim Sang Ho

doi:10.1109/NMDC.2006.4399685

Spintronic materials & devices

Lim Sang Ho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A brief introduction to spintronics, including the classification of the research fields. - The main focus is the 2^nd category to which semiconductor-based and logic devices belong. • Two important technical bases for spintronics, the two spin-channel model and DOS/mobility asymmetry, and some basic equations including the drift-diffusion equations for the current flow. • The applications of these fundamentals to spin injection; Weak or no spin injection unfortunately. • Possible solutions to efficient spin injection: tunnel barrier, half-metals, and DMSs. • Two main techniques of spin detection: electrical and optical detection. - Electrical detection in the nonlocal geometry and the optical detection in the spin-LED structure are particularly good. • Some recent advances on MgO-based MTJs and STT. • STT-MRAM and Racetrack Memory are of particular practical importance.

Original language	English
Title of host publication	IEEE Nanotechnology Materials and Devices Conference 2006, IEEE NMDC 2006
Pages	171-215
Number of pages	45
DOIs	https://doi.org/10.1109/NMDC.2006.4399685
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	2

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Materials Science

Access to Document

10.1109/NMDC.2006.4399685

Cite this

@inproceedings{f9b193f4458c401abc8f1a8c48fdd5ef,

title = "Spintronic materials & devices",

abstract = "A brief introduction to spintronics, including the classification of the research fields. - The main focus is the 2nd category to which semiconductor-based and logic devices belong. • Two important technical bases for spintronics, the two spin-channel model and DOS/mobility asymmetry, and some basic equations including the drift-diffusion equations for the current flow. • The applications of these fundamentals to spin injection; Weak or no spin injection unfortunately. • Possible solutions to efficient spin injection: tunnel barrier, half-metals, and DMSs. • Two main techniques of spin detection: electrical and optical detection. - Electrical detection in the nonlocal geometry and the optical detection in the spin-LED structure are particularly good. • Some recent advances on MgO-based MTJs and STT. • STT-MRAM and Racetrack Memory are of particular practical importance.",

author = "{Sang Ho}, Lim",

year = "2006",

doi = "10.1109/NMDC.2006.4399685",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "171--215",

booktitle = "IEEE Nanotechnology Materials and Devices Conference 2006, IEEE NMDC 2006",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

TY - GEN

T1 - Spintronic materials & devices

AU - Sang Ho, Lim

PY - 2006

Y1 - 2006

N2 - A brief introduction to spintronics, including the classification of the research fields. - The main focus is the 2nd category to which semiconductor-based and logic devices belong. • Two important technical bases for spintronics, the two spin-channel model and DOS/mobility asymmetry, and some basic equations including the drift-diffusion equations for the current flow. • The applications of these fundamentals to spin injection; Weak or no spin injection unfortunately. • Possible solutions to efficient spin injection: tunnel barrier, half-metals, and DMSs. • Two main techniques of spin detection: electrical and optical detection. - Electrical detection in the nonlocal geometry and the optical detection in the spin-LED structure are particularly good. • Some recent advances on MgO-based MTJs and STT. • STT-MRAM and Racetrack Memory are of particular practical importance.

AB - A brief introduction to spintronics, including the classification of the research fields. - The main focus is the 2nd category to which semiconductor-based and logic devices belong. • Two important technical bases for spintronics, the two spin-channel model and DOS/mobility asymmetry, and some basic equations including the drift-diffusion equations for the current flow. • The applications of these fundamentals to spin injection; Weak or no spin injection unfortunately. • Possible solutions to efficient spin injection: tunnel barrier, half-metals, and DMSs. • Two main techniques of spin detection: electrical and optical detection. - Electrical detection in the nonlocal geometry and the optical detection in the spin-LED structure are particularly good. • Some recent advances on MgO-based MTJs and STT. • STT-MRAM and Racetrack Memory are of particular practical importance.

UR - http://www.scopus.com/inward/record.url?scp=55349114378&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4399685

DO - 10.1109/NMDC.2006.4399685

M3 - Conference contribution

AN - SCOPUS:55349114378

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 171

EP - 215

BT - IEEE Nanotechnology Materials and Devices Conference 2006, IEEE NMDC 2006

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Spintronic materials & devices

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