High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2004|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering