SrTiO3 thin films deposited by CLCB in combination with sol-gel processing

Hochul Kang; Sungho Park; Kyekyoon Kim; Man Y. Sung; Hyungsoo Choi

doi:10.1149/1.1804980

SrTiO₃ thin films deposited by CLCB in combination with sol-gel processing

Hochul Kang, Sungho Park, Kyekyoon Kim, Man Y. Sung, Hyungsoo Choi

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

High-quality SrTiO₃ thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.

Original language	English
Pages (from-to)	F70-F72
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	11
DOIs	https://doi.org/10.1149/1.1804980
Publication status	Published - 2004

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.1804980

Cite this

@article{464a306663f14d5d8d3ab0ff8e523391,

title = "SrTiO3 thin films deposited by CLCB in combination with sol-gel processing",

abstract = "High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.",

author = "Hochul Kang and Sungho Park and Kyekyoon Kim and Sung, {Man Y.} and Hyungsoo Choi",

year = "2004",

doi = "10.1149/1.1804980",

language = "English",

volume = "7",

pages = "F70--F72",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "11",

}

TY - JOUR

T1 - SrTiO3 thin films deposited by CLCB in combination with sol-gel processing

AU - Kang, Hochul

AU - Park, Sungho

AU - Kim, Kyekyoon

AU - Sung, Man Y.

AU - Choi, Hyungsoo

PY - 2004

Y1 - 2004

N2 - High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.

AB - High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.

UR - http://www.scopus.com/inward/record.url?scp=10044226045&partnerID=8YFLogxK

U2 - 10.1149/1.1804980

DO - 10.1149/1.1804980

M3 - Article

AN - SCOPUS:10044226045

SN - 1099-0062

VL - 7

SP - F70-F72

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

SrTiO₃ thin films deposited by CLCB in combination with sol-gel processing

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this