SrTiO3 thin films deposited by CLCB in combination with sol-gel processing

Hochul Kang; Sungho Park; Kyekyoon Kim; Man Y. Sung; Hyungsoo Choi

doi:10.1149/1.1804980

SrTiO₃ thin films deposited by CLCB in combination with sol-gel processing

Hochul Kang, Sungho Park, Kyekyoon Kim, Man Y. Sung, Hyungsoo Choi

* Honorary professors

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

High-quality SrTiO₃ thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.

Original language	English
Pages (from-to)	F70-F72
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	11
DOIs	https://doi.org/10.1149/1.1804980
Publication status	Published - 2004

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.",

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AU - Choi, Hyungsoo

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AB - High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500°C. The film deposited at 400°C was crystallized at 600-700°C to give a granular structure (film I) while the film deposited at 500°C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared.

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SrTiO₃ thin films deposited by CLCB in combination with sol-gel processing

Abstract

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