Stability of H2-permselective SiO2 films formed by chemical vapor deposition

S. W. Nam; G. R. Gavalas

Stability of H₂-permselective SiO₂ films formed by chemical vapor deposition

S. W. Nam, G. R. Gavalas

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thin SiO₂ films were heat treated in different gas mixtures to determine their stability in functioning as high-temperature hydrogen permselective membranes. The films were formed within the walls of porous Vycor tubes by SiH₄ oxidation in an opposing reactants geometry. Film deposition was carried out at 450 °C in the presence and absence of water vapor. Immediately after formation, the films were highly selective to hydrogen permeation having a H₂:N₂ permeability ratio of about 3000:1. The films were subsequently heat treated at 450-700°C in dry N₂, dry O₂, N₂-H₂O, and O₂-H₂ mixtures. The permeation rates of H₂ and N₂ changed depending on the original conditions of film formation as well as on the heat treatment.

Original language	English
Pages (from-to)	68-74
Number of pages	7
Journal	AIChE Symposium Series
Volume	85
Issue number	268
Publication status	Published - 1989
Event	Membrane Reactor Technology - Washington, DC, USA Duration: 1988 Nov 27 → 1988 Dec 2

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

Cite this

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title = "Stability of H2-permselective SiO2 films formed by chemical vapor deposition",

abstract = "Thin SiO2 films were heat treated in different gas mixtures to determine their stability in functioning as high-temperature hydrogen permselective membranes. The films were formed within the walls of porous Vycor tubes by SiH4 oxidation in an opposing reactants geometry. Film deposition was carried out at 450 °C in the presence and absence of water vapor. Immediately after formation, the films were highly selective to hydrogen permeation having a H2:N2 permeability ratio of about 3000:1. The films were subsequently heat treated at 450-700°C in dry N2, dry O2, N2-H2O, and O2-H2 mixtures. The permeation rates of H2 and N2 changed depending on the original conditions of film formation as well as on the heat treatment.",

author = "Nam, {S. W.} and Gavalas, {G. R.}",

year = "1989",

language = "English",

volume = "85",

pages = "68--74",

journal = "AIChE Symposium Series",

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publisher = "American Institute of Chemical Engineers",

number = "268",

note = "Membrane Reactor Technology ; Conference date: 27-11-1988 Through 02-12-1988",

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T1 - Stability of H2-permselective SiO2 films formed by chemical vapor deposition

AU - Nam, S. W.

AU - Gavalas, G. R.

PY - 1989

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N2 - Thin SiO2 films were heat treated in different gas mixtures to determine their stability in functioning as high-temperature hydrogen permselective membranes. The films were formed within the walls of porous Vycor tubes by SiH4 oxidation in an opposing reactants geometry. Film deposition was carried out at 450 °C in the presence and absence of water vapor. Immediately after formation, the films were highly selective to hydrogen permeation having a H2:N2 permeability ratio of about 3000:1. The films were subsequently heat treated at 450-700°C in dry N2, dry O2, N2-H2O, and O2-H2 mixtures. The permeation rates of H2 and N2 changed depending on the original conditions of film formation as well as on the heat treatment.

AB - Thin SiO2 films were heat treated in different gas mixtures to determine their stability in functioning as high-temperature hydrogen permselective membranes. The films were formed within the walls of porous Vycor tubes by SiH4 oxidation in an opposing reactants geometry. Film deposition was carried out at 450 °C in the presence and absence of water vapor. Immediately after formation, the films were highly selective to hydrogen permeation having a H2:N2 permeability ratio of about 3000:1. The films were subsequently heat treated at 450-700°C in dry N2, dry O2, N2-H2O, and O2-H2 mixtures. The permeation rates of H2 and N2 changed depending on the original conditions of film formation as well as on the heat treatment.

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M3 - Conference article

AN - SCOPUS:0024865188

SN - 0065-8812

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JF - AIChE Symposium Series

IS - 268

T2 - Membrane Reactor Technology

Y2 - 27 November 1988 through 2 December 1988

ER -

Stability of H₂-permselective SiO₂ films formed by chemical vapor deposition

Abstract

ASJC Scopus subject areas

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