Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films

D. Y. Shin, S. J. Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

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    63 Citations (Scopus)

    Abstract

    The process of magnetization reversal in ferromagnetic Ga(1-x)MnxAs epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a)A multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.

    Original languageEnglish
    Article number047201
    JournalPhysical review letters
    Volume98
    Issue number4
    DOIs
    Publication statusPublished - 2007

    ASJC Scopus subject areas

    • General Physics and Astronomy

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