TY - JOUR
T1 - Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films
AU - Shin, D. Y.
AU - Chung, S. J.
AU - Lee, Sanghoon
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2007
Y1 - 2007
N2 - The process of magnetization reversal in ferromagnetic Ga(1-x)MnxAs epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a)A multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.
AB - The process of magnetization reversal in ferromagnetic Ga(1-x)MnxAs epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a)A multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.
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U2 - 10.1103/PhysRevLett.98.047201
DO - 10.1103/PhysRevLett.98.047201
M3 - Article
AN - SCOPUS:33846509873
SN - 0031-9007
VL - 98
JO - Physical review letters
JF - Physical review letters
IS - 4
M1 - 047201
ER -