Abstract
Static and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (Rsd) influence. The gate-to-channel capacitance (Cgc) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C2D). In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (1D) cylindrical analytical capacitance based model (C1D) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results.
Original language | English |
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Article number | 154503 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2013 Oct 21 |
Bibliographical note
Funding Information:This research was financially supported by Converging Research Center Program through the Ministry of Science, ICT and Future Planning, Korea (2013K000175). It has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement NANOFUNCTION n°257375.
ASJC Scopus subject areas
- General Physics and Astronomy