Abstract
We discovered that the shapes of the (111) facet structures were closely related to the disintegration, the spheroidization, and the stabilization of the native interfacial oxide layer in directly bonded Si wafer pairs. These (111) facet structures are generated from the anisotropic etching of (110) cross-section of bonded (100) Si wafer pairs. Also, we confirmed that most of the interfacial oxide existing at the bonding interface of a well-aligned wafer pairs were disintegrated and spheroidized by high-temperature annealing process above 900°C.
| Original language | English |
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| Pages | 337-342 |
| Number of pages | 6 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems - San Diego, CA, USA Duration: 1996 Feb 11 → 1996 Feb 15 |
Other
| Other | Proceedings of the 1995 9th Annual International Workshop on Micro Electro Mechanical Systems |
|---|---|
| City | San Diego, CA, USA |
| Period | 96/2/11 → 96/2/15 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering