Steep switching characteristics of single-gated feedback field-effect transistors

Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.

Original languageEnglish
Article number055205
Issue number5
Publication statusPublished - 2017 Feb 3

Bibliographical note

Funding Information:
This work was partly supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2013R1A2A1A03070750, NRF- 2015R1A2A1A15055437), and the Brain Korea 21 Plus Project in 2016.

Publisher Copyright:
© 2016 IOP Publishing Ltd.


  • feedback field-effect transistors
  • positive feedback loop
  • steep switching characteristics
  • subthreshold swing

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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