In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
Bibliographical noteFunding Information:
This work was partly supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2013R1A2A1A03070750, NRF- 2015R1A2A1A15055437), and the Brain Korea 21 Plus Project in 2016.
© 2016 IOP Publishing Ltd.
- feedback field-effect transistors
- positive feedback loop
- steep switching characteristics
- subthreshold swing
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering