TY - JOUR
T1 - Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device
AU - Yoo, Taehee
AU - Shin, Dongyun
AU - Kim, Jungtaek
AU - Kim, Hyungchan
AU - Lee, Sanghoon
AU - Liu, X.
AU - Furdyna, J. K.
N1 - Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; by the Korea Research Foundation Grant KRF-2004-005-C00068; and by the National Science Foundations Grant DMR06-03762.
PY - 2009/7
Y1 - 2009/7
N2 - The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.
AB - The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.
KW - Ferromagnetic semiconductor
KW - Magnetic anisotropy
KW - Planar Hall effect
UR - http://www.scopus.com/inward/record.url?scp=61849184312&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2008.07.006
DO - 10.1016/j.cap.2008.07.006
M3 - Article
AN - SCOPUS:61849184312
SN - 1567-1739
VL - 9
SP - 773
EP - 776
JO - Current Applied Physics
JF - Current Applied Physics
IS - 4
ER -