Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

Taehee Yoo; Dongyun Shin; Jungtaek Kim; Hyungchan Kim; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1016/j.cap.2008.07.006

Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

Taehee Yoo
, Dongyun Shin
, Jungtaek Kim
, Hyungchan Kim
, Sanghoon Lee^*
, X. Liu
, J. K. Furdyna

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.

Original language	English
Pages (from-to)	773-776
Number of pages	4
Journal	Current Applied Physics
Volume	9
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2008.07.006
Publication status	Published - 2009 Jul

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; by the Korea Research Foundation Grant KRF-2004-005-C00068; and by the National Science Foundations Grant DMR06-03762.

Keywords

Ferromagnetic semiconductor
Magnetic anisotropy
Planar Hall effect

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Access to Document

10.1016/j.cap.2008.07.006

Cite this

@article{0029f60f868347c5bd69bb29b763811f,

title = "Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device",

abstract = "The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.",

keywords = "Ferromagnetic semiconductor, Magnetic anisotropy, Planar Hall effect",

author = "Taehee Yoo and Dongyun Shin and Jungtaek Kim and Hyungchan Kim and Sanghoon Lee and X. Liu and Furdyna, \{J. K.\}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Seoul R\&DB Program; by the Korea Research Foundation Grant KRF-2004-005-C00068; and by the National Science Foundations Grant DMR06-03762.",

year = "2009",

month = jul,

doi = "10.1016/j.cap.2008.07.006",

language = "English",

volume = "9",

pages = "773--776",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

AU - Yoo, Taehee

AU - Shin, Dongyun

AU - Kim, Jungtaek

AU - Kim, Hyungchan

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; by the Korea Research Foundation Grant KRF-2004-005-C00068; and by the National Science Foundations Grant DMR06-03762.

PY - 2009/7

Y1 - 2009/7

N2 - The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.

AB - The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.

KW - Ferromagnetic semiconductor

KW - Magnetic anisotropy

KW - Planar Hall effect

UR - https://www.scopus.com/pages/publications/61849184312

U2 - 10.1016/j.cap.2008.07.006

DO - 10.1016/j.cap.2008.07.006

M3 - Article

AN - SCOPUS:61849184312

SN - 1567-1739

VL - 9

SP - 773

EP - 776

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

ER -

Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this