STM investigation of nano-structures fabricated on passivated Si surfaces

Jeong Sook Ha; Kang Ho Park; Kyoung Wan Park; Wan Soo Yun

doi:10.1007/BF02697204

STM investigation of nano-structures fabricated on passivated Si surfaces

Jeong Sook Ha, Kang Ho Park, Kyoung Wan Park, Wan Soo Yun

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.

Original language	English
Pages (from-to)	169-173
Number of pages	5
Journal	Korean Journal of Chemical Engineering
Volume	20
Issue number	1
DOIs	https://doi.org/10.1007/BF02697204
Publication status	Published - 2003 Jan

Bibliographical note

Funding Information:
This work has been supported by the Ministry of Information and Communications, Korea.

Keywords

Ag Nano dot
Atomic Force Microscope
Au Nano-wire
Carbon Nanotube
Nano-fabrication
Passivated Si Surfaces
Scanning Tunneling Microscope
Si Nano-dot

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

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10.1007/BF02697204

Cite this

@article{27f54b2a855c41239bcd54a1044d239a,

title = "STM investigation of nano-structures fabricated on passivated Si surfaces",

abstract = "We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.",

keywords = "Ag Nano dot, Atomic Force Microscope, Au Nano-wire, Carbon Nanotube, Nano-fabrication, Passivated Si Surfaces, Scanning Tunneling Microscope, Si Nano-dot",

author = "Ha, {Jeong Sook} and Park, {Kang Ho} and Park, {Kyoung Wan} and Yun, {Wan Soo}",

note = "Funding Information: This work has been supported by the Ministry of Information and Communications, Korea.",

year = "2003",

month = jan,

doi = "10.1007/BF02697204",

language = "English",

volume = "20",

pages = "169--173",

journal = "Korean Journal of Chemical Engineering",

issn = "0256-1115",

publisher = "Springer",

number = "1",

}

TY - JOUR

T1 - STM investigation of nano-structures fabricated on passivated Si surfaces

AU - Ha, Jeong Sook

AU - Park, Kang Ho

AU - Park, Kyoung Wan

AU - Yun, Wan Soo

N1 - Funding Information: This work has been supported by the Ministry of Information and Communications, Korea.

PY - 2003/1

Y1 - 2003/1

N2 - We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.

AB - We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.

KW - Ag Nano dot

KW - Atomic Force Microscope

KW - Au Nano-wire

KW - Carbon Nanotube

KW - Nano-fabrication

KW - Passivated Si Surfaces

KW - Scanning Tunneling Microscope

KW - Si Nano-dot

UR - http://www.scopus.com/inward/record.url?scp=0037243932&partnerID=8YFLogxK

U2 - 10.1007/BF02697204

DO - 10.1007/BF02697204

M3 - Article

AN - SCOPUS:0037243932

SN - 0256-1115

VL - 20

SP - 169

EP - 173

JO - Korean Journal of Chemical Engineering

JF - Korean Journal of Chemical Engineering

IS - 1

ER -

STM investigation of nano-structures fabricated on passivated Si surfaces

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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