Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene

Kyu Won Lee; Cheol Eui Lee

doi:10.1016/j.physb.2019.411816

Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene

Kyu Won Lee, Cheol Eui Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the effects of biaxial strain and charge doping on the antiferromagnetic order of AB-stacked bilayer silicene by using the density functional theory calculations. The antiferromagnetic order, which decreases and disappears with compressive strain and charge doping, increases with tensile strain and undergoes a metal–insulator–metal transition. Increased lattice constant increases the overlap between the conduction and valence bands and the density of states at the Fermi level, which are responsible for the antiferromagnetic order.

Original language	English
Article number	411816
Journal	Physica B: Condensed Matter
Volume	577
DOIs	https://doi.org/10.1016/j.physb.2019.411816
Publication status	Published - 2020 Jan 15

Bibliographical note

Funding Information:
This work was supported by the Ministry of Education of the Republic of Korea and the National Research Foundation of Korea ( 2019S1A5A2A03050121 ).

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

AB-stacked bilayer silicene
Antiferromagnetic order
Biaxial strain
Charge doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2019.411816

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@article{a99e498f94ce4ceea08304dff420efd1,

title = "Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene",

abstract = "We have investigated the effects of biaxial strain and charge doping on the antiferromagnetic order of AB-stacked bilayer silicene by using the density functional theory calculations. The antiferromagnetic order, which decreases and disappears with compressive strain and charge doping, increases with tensile strain and undergoes a metal–insulator–metal transition. Increased lattice constant increases the overlap between the conduction and valence bands and the density of states at the Fermi level, which are responsible for the antiferromagnetic order.",

keywords = "AB-stacked bilayer silicene, Antiferromagnetic order, Biaxial strain, Charge doping",

author = "Lee, {Kyu Won} and Lee, {Cheol Eui}",

note = "Funding Information: This work was supported by the Ministry of Education of the Republic of Korea and the National Research Foundation of Korea ( 2019S1A5A2A03050121 ). Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = jan,

day = "15",

doi = "10.1016/j.physb.2019.411816",

language = "English",

volume = "577",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene

AU - Lee, Kyu Won

AU - Lee, Cheol Eui

N1 - Funding Information: This work was supported by the Ministry of Education of the Republic of Korea and the National Research Foundation of Korea ( 2019S1A5A2A03050121 ). Publisher Copyright: © 2019 Elsevier B.V.

PY - 2020/1/15

Y1 - 2020/1/15

N2 - We have investigated the effects of biaxial strain and charge doping on the antiferromagnetic order of AB-stacked bilayer silicene by using the density functional theory calculations. The antiferromagnetic order, which decreases and disappears with compressive strain and charge doping, increases with tensile strain and undergoes a metal–insulator–metal transition. Increased lattice constant increases the overlap between the conduction and valence bands and the density of states at the Fermi level, which are responsible for the antiferromagnetic order.

AB - We have investigated the effects of biaxial strain and charge doping on the antiferromagnetic order of AB-stacked bilayer silicene by using the density functional theory calculations. The antiferromagnetic order, which decreases and disappears with compressive strain and charge doping, increases with tensile strain and undergoes a metal–insulator–metal transition. Increased lattice constant increases the overlap between the conduction and valence bands and the density of states at the Fermi level, which are responsible for the antiferromagnetic order.

KW - AB-stacked bilayer silicene

KW - Antiferromagnetic order

KW - Biaxial strain

KW - Charge doping

UR - http://www.scopus.com/inward/record.url?scp=85074385857&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2019.411816

DO - 10.1016/j.physb.2019.411816

M3 - Article

AN - SCOPUS:85074385857

SN - 0921-4526

VL - 577

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

M1 - 411816

ER -

Strain and doping effects on the antiferromagnetism of AB-stacked bilayer silicene

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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