We have investigated the effects of biaxial strain and charge doping on the antiferromagnetic order of AB-stacked bilayer silicene by using the density functional theory calculations. The antiferromagnetic order, which decreases and disappears with compressive strain and charge doping, increases with tensile strain and undergoes a metal–insulator–metal transition. Increased lattice constant increases the overlap between the conduction and valence bands and the density of states at the Fermi level, which are responsible for the antiferromagnetic order.
Bibliographical noteFunding Information:
This work was supported by the Ministry of Education of the Republic of Korea and the National Research Foundation of Korea ( 2019S1A5A2A03050121 ).
© 2019 Elsevier B.V.
- AB-stacked bilayer silicene
- Antiferromagnetic order
- Biaxial strain
- Charge doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering