Abstract
6H-SiC was chosen to measure the strain by external stress using micro-Raman scattering. Under various external stress conditions, our experiments showed that the top part of 6H-SiC was under a tensile stress while the bottom part of 6H-SiC was under a compressive stress. When it was bent more and more, the stress was increased at both top and bottom. This data is very helpful in understanding the mechanical properties of a 6H-SiC cantilever which is very promising in SiC micro electro mechanical system (MEMS) applications in harsh environments.
Original language | English |
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Pages (from-to) | 239-240 |
Number of pages | 2 |
Journal | Journal of Ceramic Processing Research |
Volume | 7 |
Issue number | 3 |
Publication status | Published - 2006 |
Keywords
- 6H-SiC
- MEMS
- Raman
- Stain
- Stress
ASJC Scopus subject areas
- Ceramics and Composites