Strain measurement in 6H-SiC under external stress

J. Kim, F. Ren, S. J. Pearton

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    6H-SiC was chosen to measure the strain by external stress using micro-Raman scattering. Under various external stress conditions, our experiments showed that the top part of 6H-SiC was under a tensile stress while the bottom part of 6H-SiC was under a compressive stress. When it was bent more and more, the stress was increased at both top and bottom. This data is very helpful in understanding the mechanical properties of a 6H-SiC cantilever which is very promising in SiC micro electro mechanical system (MEMS) applications in harsh environments.

    Original languageEnglish
    Pages (from-to)239-240
    Number of pages2
    JournalJournal of Ceramic Processing Research
    Volume7
    Issue number3
    Publication statusPublished - 2006

    Keywords

    • 6H-SiC
    • MEMS
    • Raman
    • Stain
    • Stress

    ASJC Scopus subject areas

    • Ceramics and Composites

    Fingerprint

    Dive into the research topics of 'Strain measurement in 6H-SiC under external stress'. Together they form a unique fingerprint.

    Cite this