Strain measurement in 6H-SiC under external stress

6H-SiC was chosen to measure the strain by external stress using micro-Raman scattering. Under various external stress conditions, our experiments showed that the top part of 6H-SiC was under a tensile stress while the bottom part of 6H-SiC was under a compressive stress. When it was bent more and more, the stress was increased at both top and bottom. This data is very helpful in understanding the mechanical properties of a 6H-SiC cantilever which is very promising in SiC micro electro mechanical system (MEMS) applications in harsh environments.