Strained gallium nitride nanowires were synthesized on silicon substrates using chemical vapor deposition by the reaction of gallium and gallium nitride mixture with ammonia. The nanowires were having single crystalline wurtzite structure and their diameter was 25 nm and length was 20-40 μm. The x-ray diffraction and Raman scattering data showed that the separations of the neighboring lattice planes along the growth direction were shorter than those of bulk gallium nitride. The temperature-dependent photoluminescence of the nanowires showed a band gap in the energy range of 2.9-3.6 eV.
|Number of pages||8|
|Journal||Journal of Chemical Physics|
|Publication status||Published - 2002 Jun 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry