Strained gallium nitride nanowires

Hee Won Seo; Seung Yong Bae; Jeunghee Park; Hyunik Yang; Kwang Soo Park; Sangsig Kim

doi:10.1063/1.1475748

Strained gallium nitride nanowires

Hee Won Seo, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Kwang Soo Park, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

Strained gallium nitride nanowires were synthesized on silicon substrates using chemical vapor deposition by the reaction of gallium and gallium nitride mixture with ammonia. The nanowires were having single crystalline wurtzite structure and their diameter was 25 nm and length was 20-40 μm. The x-ray diffraction and Raman scattering data showed that the separations of the neighboring lattice planes along the growth direction were shorter than those of bulk gallium nitride. The temperature-dependent photoluminescence of the nanowires showed a band gap in the energy range of 2.9-3.6 eV.

Original language	English
Pages (from-to)	9492-9499
Number of pages	8
Journal	Journal of Chemical Physics
Volume	116
Issue number	21
DOIs	https://doi.org/10.1063/1.1475748
Publication status	Published - 2002 Jun 1

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1063/1.1475748

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AU - Seo, Hee Won

AU - Bae, Seung Yong

AU - Park, Jeunghee

AU - Yang, Hyunik

AU - Park, Kwang Soo

AU - Kim, Sangsig

PY - 2002/6/1

Y1 - 2002/6/1

N2 - Strained gallium nitride nanowires were synthesized on silicon substrates using chemical vapor deposition by the reaction of gallium and gallium nitride mixture with ammonia. The nanowires were having single crystalline wurtzite structure and their diameter was 25 nm and length was 20-40 μm. The x-ray diffraction and Raman scattering data showed that the separations of the neighboring lattice planes along the growth direction were shorter than those of bulk gallium nitride. The temperature-dependent photoluminescence of the nanowires showed a band gap in the energy range of 2.9-3.6 eV.

AB - Strained gallium nitride nanowires were synthesized on silicon substrates using chemical vapor deposition by the reaction of gallium and gallium nitride mixture with ammonia. The nanowires were having single crystalline wurtzite structure and their diameter was 25 nm and length was 20-40 μm. The x-ray diffraction and Raman scattering data showed that the separations of the neighboring lattice planes along the growth direction were shorter than those of bulk gallium nitride. The temperature-dependent photoluminescence of the nanowires showed a band gap in the energy range of 2.9-3.6 eV.

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Strained gallium nitride nanowires

Abstract

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