Stretchable field-effect-transistor array of suspended SnO2 nanowires

Gunchul Shin, Chang Hoon Yoon, Min Young Bae, Yoon Chul Kim, Sahng Ki Hong, John A. Rogers, Jeong Sook Ha

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field-effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field-effect transistors is maintained under stretching up to approximately 40%.

Original languageEnglish
Pages (from-to)1181-1185
Number of pages5
Issue number9
Publication statusPublished - 2011 May 9


  • field-effect transistors
  • nanotechnology
  • nanowires
  • stretchable devices
  • suspended nanowires

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • General Chemistry
  • General Materials Science


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