Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles

Sungwoo Jun; Kwang Wook Choi; Kwang Seok Kim; Dae Up Kim; Chan Jae Lee; Chul Jong Han; Cheul Ro Lee; Byeong Kwon Ju; Jong Woong Kim

doi:10.1016/j.compscitech.2019.107773

Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles

Sungwoo Jun, Kwang Wook Choi, Kwang Seok Kim, Dae Up Kim, Chan Jae Lee, Chul Jong Han, Cheul Ro Lee, Byeong Kwon Ju, Jong Woong Kim

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Conventional photodetectors (PDs) are based on measuring photocurrent, which is formed by the separation of electron-hole pairs generated in semiconductors upon light irradiation, through electrodes in direct contact with the semiconductors. Such devices are usually fabricated through complicated and precise processes such as thin film formation by vacuum deposition and fine patterning by photolithography and etching. In addition, PDs have a drawback that the contact quality between the electrode and the semiconductor is easily affected by external stress applied to the device. These issues make it difficult to implement a mechanically flexible device driven by conventional sensing mechanisms. Here we report a simple structured PD based on a semiconductor particle-polymer composite layer surrounded by two facing transparent electrodes, inspired by the fact that the dielectric properties of certain semiconductors change upon light irradiation with a photonic energy greater than or equal to their bandgap. In order to realize this, we synthesized a transparent and stretchable polymer, polyurethane-urea (PUU), which is compatible with Ag nanowires (AgNWs) and polydimethylsiloxane (PDMS) used for implementing stretchable electrodes, and dispersed ZnS:Cu particles into the PUU to form a sensory layer. The fabricated composite surrounded by two facing AgNW-based transparent electrodes was transparent and stretchable, and the capacitance formed at the composite sensitively changed upon irradiation of light with a wavelength of 420 nm and a power of 1.2 mW/cm² even when the device was stretched or cut in half.

Original language	English
Article number	107773
Journal	Composites Science and Technology
Volume	182
DOIs	https://doi.org/10.1016/j.compscitech.2019.107773
Publication status	Published - 2019 Sept 29

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant (Number 2015R1A4A1042417 , 2018R1D1A1B07047386 and Number 2016M3A7B4910 ) funded by the Korean government ( MSIP ). Further support was also provided by the Korea Institute of Industrial TechnologyProgram “Characteristics of VO2 Nanoink and Intense Pulsed Light Low-Temperature Sintering for Flexible Smart Window Films Using Direct Printing Technology ( KITECH EO-19-0006 )”. This work was also partly supported by the KIAT( Korea Institute for Advancement of Technology) grant funded by the Korea Government ( MOTIE: Ministry of Trade Industry and Energy ) (No. P0001018 , HRD program for Highly educated human resources development project on cutting-edge sensor technology for sensor industry acceleration). Partial support was also provided by the KSSRC program (Stretchable Multi Sensor for Wearable IoT Device) and the National Research Foundation of Korea(NRF) grant funded by the Korea Government(MSIT) (No. 2019R1A2B5B01070286 ).

Publisher Copyright:
© 2019 Elsevier Ltd

Keywords

Electrical properties
Flexible composites
Nanocomposites

ASJC Scopus subject areas

Ceramics and Composites
General Engineering

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10.1016/j.compscitech.2019.107773

Cite this

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title = "Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles",

abstract = "Conventional photodetectors (PDs) are based on measuring photocurrent, which is formed by the separation of electron-hole pairs generated in semiconductors upon light irradiation, through electrodes in direct contact with the semiconductors. Such devices are usually fabricated through complicated and precise processes such as thin film formation by vacuum deposition and fine patterning by photolithography and etching. In addition, PDs have a drawback that the contact quality between the electrode and the semiconductor is easily affected by external stress applied to the device. These issues make it difficult to implement a mechanically flexible device driven by conventional sensing mechanisms. Here we report a simple structured PD based on a semiconductor particle-polymer composite layer surrounded by two facing transparent electrodes, inspired by the fact that the dielectric properties of certain semiconductors change upon light irradiation with a photonic energy greater than or equal to their bandgap. In order to realize this, we synthesized a transparent and stretchable polymer, polyurethane-urea (PUU), which is compatible with Ag nanowires (AgNWs) and polydimethylsiloxane (PDMS) used for implementing stretchable electrodes, and dispersed ZnS:Cu particles into the PUU to form a sensory layer. The fabricated composite surrounded by two facing AgNW-based transparent electrodes was transparent and stretchable, and the capacitance formed at the composite sensitively changed upon irradiation of light with a wavelength of 420 nm and a power of 1.2 mW/cm2 even when the device was stretched or cut in half.",

keywords = "Electrical properties, Flexible composites, Nanocomposites",

author = "Sungwoo Jun and Choi, {Kwang Wook} and Kim, {Kwang Seok} and Kim, {Dae Up} and Lee, {Chan Jae} and Han, {Chul Jong} and Lee, {Cheul Ro} and Ju, {Byeong Kwon} and Kim, {Jong Woong}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant (Number 2015R1A4A1042417 , 2018R1D1A1B07047386 and Number 2016M3A7B4910 ) funded by the Korean government ( MSIP ). Further support was also provided by the Korea Institute of Industrial TechnologyProgram “Characteristics of VO2 Nanoink and Intense Pulsed Light Low-Temperature Sintering for Flexible Smart Window Films Using Direct Printing Technology ( KITECH EO-19-0006 )”. This work was also partly supported by the KIAT( Korea Institute for Advancement of Technology) grant funded by the Korea Government ( MOTIE: Ministry of Trade Industry and Energy ) (No. P0001018 , HRD program for Highly educated human resources development project on cutting-edge sensor technology for sensor industry acceleration). Partial support was also provided by the KSSRC program (Stretchable Multi Sensor for Wearable IoT Device) and the National Research Foundation of Korea(NRF) grant funded by the Korea Government(MSIT) (No. 2019R1A2B5B01070286 ). Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

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AU - Jun, Sungwoo

AU - Choi, Kwang Wook

AU - Kim, Kwang Seok

AU - Kim, Dae Up

AU - Lee, Chan Jae

AU - Han, Chul Jong

AU - Lee, Cheul Ro

AU - Ju, Byeong Kwon

AU - Kim, Jong Woong

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PY - 2019/9/29

Y1 - 2019/9/29

N2 - Conventional photodetectors (PDs) are based on measuring photocurrent, which is formed by the separation of electron-hole pairs generated in semiconductors upon light irradiation, through electrodes in direct contact with the semiconductors. Such devices are usually fabricated through complicated and precise processes such as thin film formation by vacuum deposition and fine patterning by photolithography and etching. In addition, PDs have a drawback that the contact quality between the electrode and the semiconductor is easily affected by external stress applied to the device. These issues make it difficult to implement a mechanically flexible device driven by conventional sensing mechanisms. Here we report a simple structured PD based on a semiconductor particle-polymer composite layer surrounded by two facing transparent electrodes, inspired by the fact that the dielectric properties of certain semiconductors change upon light irradiation with a photonic energy greater than or equal to their bandgap. In order to realize this, we synthesized a transparent and stretchable polymer, polyurethane-urea (PUU), which is compatible with Ag nanowires (AgNWs) and polydimethylsiloxane (PDMS) used for implementing stretchable electrodes, and dispersed ZnS:Cu particles into the PUU to form a sensory layer. The fabricated composite surrounded by two facing AgNW-based transparent electrodes was transparent and stretchable, and the capacitance formed at the composite sensitively changed upon irradiation of light with a wavelength of 420 nm and a power of 1.2 mW/cm2 even when the device was stretched or cut in half.

AB - Conventional photodetectors (PDs) are based on measuring photocurrent, which is formed by the separation of electron-hole pairs generated in semiconductors upon light irradiation, through electrodes in direct contact with the semiconductors. Such devices are usually fabricated through complicated and precise processes such as thin film formation by vacuum deposition and fine patterning by photolithography and etching. In addition, PDs have a drawback that the contact quality between the electrode and the semiconductor is easily affected by external stress applied to the device. These issues make it difficult to implement a mechanically flexible device driven by conventional sensing mechanisms. Here we report a simple structured PD based on a semiconductor particle-polymer composite layer surrounded by two facing transparent electrodes, inspired by the fact that the dielectric properties of certain semiconductors change upon light irradiation with a photonic energy greater than or equal to their bandgap. In order to realize this, we synthesized a transparent and stretchable polymer, polyurethane-urea (PUU), which is compatible with Ag nanowires (AgNWs) and polydimethylsiloxane (PDMS) used for implementing stretchable electrodes, and dispersed ZnS:Cu particles into the PUU to form a sensory layer. The fabricated composite surrounded by two facing AgNW-based transparent electrodes was transparent and stretchable, and the capacitance formed at the composite sensitively changed upon irradiation of light with a wavelength of 420 nm and a power of 1.2 mW/cm2 even when the device was stretched or cut in half.

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Stretchable photodetector utilizing the change in capacitance formed in a composite film containing semiconductor particles

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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