Abstract
The dielectric constant (r) of the films grown at 100 °C increased as the beam energy density increased and a saturated value of 80 was obtained for the film grown under 6.0 J cm-2. The larger r value was attributed to the increased amount of nano-sized Bi 3NbO7 crystals. The r values also increased with the beam energy density for films grown at 300 °C and a very high r value of 135.6 with a low loss of 3.0% at 100 kHz was obtained for the film grown at 300 °C under a beam density of 3.0 J cm-2. The crystalline BiNbO4 phase developed, but the amount of Bi 3NbO7 crystals decreased as the beam energy density increased, indicating that the increased r values of the films grown at 300 °C could be due to the formation of the crystalline BiNbO4 phase. The electrical properties of the films grown at 300 °C under a beam density of 3.0 J cm-2 were considerably influenced by the oxygen partial pressure (OPP) during annealing. The film annealed at 300 °C under a 50.0 torr OPP exhibited a low leakage current density of 5.4 × 10 -9 A cm-2 at 0.3 MV cm-1 with a relatively high breakdown field of 0.4 MV cm-1.
Original language | English |
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Pages (from-to) | 5434-5439 |
Number of pages | 6 |
Journal | Acta Materialia |
Volume | 59 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2011 Aug |
Keywords
- Dielectrics
- Laser deposition
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys