Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In xAl 1-xSb continuously graded buffer

Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Hyun Cheol Koo, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

    Original languageEnglish
    Pages (from-to)2927-2930
    Number of pages4
    JournalMaterials Research Bulletin
    Volume47
    Issue number10
    DOIs
    Publication statusPublished - 2012 Oct

    Bibliographical note

    Funding Information:
    This work was supported mainly by KIST Institutional Programs including Dream Project and partially by NRF grant funded by MEST (No. 2011-0016471 ).

    Copyright:
    Copyright 2012 Elsevier B.V., All rights reserved.

    Keywords

    • A. Semiconductors
    • A. Thin films
    • B. Epitaxial growth
    • D. Defects
    • D. Electrical properties

    ASJC Scopus subject areas

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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