Abstract
High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.
Original language | English |
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Pages (from-to) | 2927-2930 |
Number of pages | 4 |
Journal | Materials Research Bulletin |
Volume | 47 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2012 Oct |
Bibliographical note
Funding Information:This work was supported mainly by KIST Institutional Programs including Dream Project and partially by NRF grant funded by MEST (No. 2011-0016471 ).
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
Keywords
- A. Semiconductors
- A. Thin films
- B. Epitaxial growth
- D. Defects
- D. Electrical properties
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering