Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors

Joo Young Choi; Lee Seung Kang; Kyung Hoon Cho; Tae Geun Seong; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Jong Hee Kim

doi:10.1109/TED.2009.2022892

Structural and electrical properties of Mn-doped Bi₄ Ti₃O₁₂ thin film grown on SiO₂/Si substrate for RF MIM capacitors

Joo Young Choi, Lee Seung Kang, Kyung Hoon Cho, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Mn-doped Bi₄Ti₃O₁₂ (M-B₄ T₃) films were well formed on a TiN/SiO₂/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B₄T₃ films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ² at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V², respectively, with a low leakage current density of 7.8 × 10^-8A/cm² at 2 V. Therefore, the M-B₄T₃ thin film grown on a TiN/ SiO₂/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

Original language	English
Pages (from-to)	1631-1636
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	8
DOIs	https://doi.org/10.1109/TED.2009.2022892
Publication status	Published - 2009

Bibliographical note

Funding Information:
Manuscript received January 14, 2009; revised April 30, 2009. First published June 23, 2009; current version published July 22, 2009. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea. The review of this paper was arranged by Editor V. R. Rao. J.-Y. Choi, L.-S. Kang, K.-H. Cho, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). T.-G. Seong is with the Department of Nanosemiconductor Engineering, Korea University, Seoul 136-701, Korea. C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2022892

Keywords

BiTiO
High-κ
Metal-insulator-metal (MIM) capacitor
Temperature coefficient of capacitance (TCC)
Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2009.2022892

Cite this

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title = "Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors",

abstract = "Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.",

keywords = "BiTiO, High-κ, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC), Voltage coefficient of capacitance (VCC)",

author = "Choi, {Joo Young} and Kang, {Lee Seung} and Cho, {Kyung Hoon} and Seong, {Tae Geun} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",

note = "Funding Information: Manuscript received January 14, 2009; revised April 30, 2009. First published June 23, 2009; current version published July 22, 2009. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea. The review of this paper was arranged by Editor V. R. Rao. J.-Y. Choi, L.-S. Kang, K.-H. Cho, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). T.-G. Seong is with the Department of Nanosemiconductor Engineering, Korea University, Seoul 136-701, Korea. C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2022892",

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T1 - Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors

AU - Choi, Joo Young

AU - Kang, Lee Seung

AU - Cho, Kyung Hoon

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

N1 - Funding Information: Manuscript received January 14, 2009; revised April 30, 2009. First published June 23, 2009; current version published July 22, 2009. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea. The review of this paper was arranged by Editor V. R. Rao. J.-Y. Choi, L.-S. Kang, K.-H. Cho, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). T.-G. Seong is with the Department of Nanosemiconductor Engineering, Korea University, Seoul 136-701, Korea. C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2022892

PY - 2009

Y1 - 2009

N2 - Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

AB - Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

KW - BiTiO

KW - High-κ

KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

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