Structural and electrical properties of Mn-doped Bi4 Ti3O12 thin film grown on SiO2/Si substrate for RF MIM capacitors

Joo Young Choi, Lee Seung Kang, Kyung Hoon Cho, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Mn-doped Bi4Ti3O12 (M-B4 T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 °C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47/μ2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/ ° C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10-8A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/ SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors.

    Original languageEnglish
    Pages (from-to)1631-1636
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume56
    Issue number8
    DOIs
    Publication statusPublished - 2009

    Bibliographical note

    Funding Information:
    Manuscript received January 14, 2009; revised April 30, 2009. First published June 23, 2009; current version published July 22, 2009. This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea. The review of this paper was arranged by Editor V. R. Rao. J.-Y. Choi, L.-S. Kang, K.-H. Cho, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). T.-G. Seong is with the Department of Nanosemiconductor Engineering, Korea University, Seoul 136-701, Korea. C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. J.-H. Kim is with the Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2022892

    Keywords

    • BiTiO
    • High-κ
    • Metal-insulator-metal (MIM) capacitor
    • Temperature coefficient of capacitance (TCC)
    • Voltage coefficient of capacitance (VCC)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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