Structural and electrical properties of Mn-doped Bi₄ Ti₃O₁₂ thin film grown on SiO₂/Si substrate for RF MIM capacitors

Keyphrases

• Bi4Ti3O12 33%
• Capacitance Density 33%
• Electrical Properties 100%
• Gigahertz Range 33%
• High Capacitance 33%
• High Dielectric Constant 33%
• High Performance 33%
• Interstitial Ion 33%
• Kilohertz 33%
• Leakage Current Density 100%
• Low Leakage Current 66%
• Low Loss 33%
• Metal-insulator-metal Capacitor 33%
• MIM Capacitor 100%
• Mn-doped 100%
• Oxygen Interstitials 33%
• Oxygen Partial Pressure 66%
• Oxygen Vacancy 33%
• Quadratic Voltage Coefficient of Capacitance 33%
• Radio Frequency 33%
• RF Magnetron Sputtering 33%
• Si Substrate 100%
• Silica 100%
• Structural Properties 100%
• Thick Film 33%

Material Science

• Capacitance 50%
• Capacitor 100%
• Density 100%
• Film 100%
• Magnetron Sputtering 25%
• Oxygen Vacancy 25%
• Permittivity 25%
• Thick Films 25%
• Thin Films 100%

Engineering

• Buckling 33%
• High Dielectric Constant 33%
• Interstitial Oxygen 33%
• Magnetron 33%
• Metal-Insulator-Metal 33%
• Oxygen Partial Pressure 66%
• Oxygen Vacancy 33%
• Radio Frequency 33%
• Si Substrate 100%
• Thin Films 100%