Structural and electronic properties of amorphous and polycrystalline In2Se3 films

A. Chaiken; K. Nauka; G. A. Gibson; Heon Lee; C. C. Yang; J. Wu; J. W. Ager; K. M. Yu; W. Walukiewicz

doi:10.1063/1.1592631

Structural and electronic properties of amorphous and polycrystalline In₂Se₃ films

A. Chaiken, K. Nauka, G. A. Gibson, Heon Lee, C. C. Yang, J. Wu, J. W. Ager, K. M. Yu, W. Walukiewicz

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

Structural and electronic properties of amorphous and polycrystalline In₂Se₃ films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In₂Se₃ films is due to replacement of In-In bonds with In-Se bonds during crystallization.

Original language	English
Pages (from-to)	2390-2397
Number of pages	8
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1592631
Publication status	Published - 2003 Aug 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Structural and electronic properties of amorphous and polycrystalline In2Se3 films",

abstract = "Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.",

author = "A. Chaiken and K. Nauka and Gibson, {G. A.} and Heon Lee and Yang, {C. C.} and J. Wu and Ager, {J. W.} and Yu, {K. M.} and W. Walukiewicz",

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AU - Chaiken, A.

AU - Nauka, K.

AU - Gibson, G. A.

AU - Lee, Heon

AU - Yang, C. C.

AU - Wu, J.

AU - Ager, J. W.

AU - Yu, K. M.

AU - Walukiewicz, W.

PY - 2003/8/15

Y1 - 2003/8/15

N2 - Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.

AB - Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.

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U2 - 10.1063/1.1592631

DO - 10.1063/1.1592631

M3 - Article

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EP - 2397

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Structural and electronic properties of amorphous and polycrystalline In₂Se₃ films

Abstract

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