Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires

Myungil Kang; Jong Soo Lee; Sung Kyu Sim; Byungdon Min; Kyoungah Cho; Hyunsuk Kim; Man Young Sung; Sangsig Kim; Se Ahn Song; Moon Sook Lee

doi:10.1016/j.tsf.2004.02.025

Structural and optical properties of as-synthesized, Ga₂O ₃-coated, and Al₂O₃-coated GaN nanowires

Myungil Kang, Jong Soo Lee, Sung Kyu Sim, Byungdon Min, Kyoungah Cho, Hyunsuk Kim, Man Young Sung, Sangsig Kim, Se Ahn Song, Moon Sook Lee

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Structural and optical properties of as-synthesized, Ga₂O ₃-coated, and Al₂O₃-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH₃ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2 nm-thick Ga₂O ₃ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al₂O₃ by atomic layer deposition technique. Our study suggests that the Al₂O₃-coating passivates some of surface states in the GaN nanowires.

Original language	English
Pages (from-to)	265-271
Number of pages	7
Journal	Thin Solid Films
Volume	466
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.02.025
Publication status	Published - 2004 Nov 1

Bibliographical note

Funding Information:
This work was supported by the Korean Ministry of Science and Technology as a part of the '03 Nuclear R&D Program, Grant No. M2-0363-00-0052, Grant No. R01-1999-000-00230-0, Grant No. R01-2002-000-00504-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and National R&D project for Nano Science and Technology.

Keywords

Coatings
GaN nanowires
Optical properties
Oxidation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2004.02.025

Cite this

@article{e15fc0d804e84a33bd453ca9cbb82a52,

title = "Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires",

abstract = "Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2 nm-thick Ga2O 3 layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al2O3 by atomic layer deposition technique. Our study suggests that the Al2O3-coating passivates some of surface states in the GaN nanowires.",

keywords = "Coatings, GaN nanowires, Optical properties, Oxidation",

author = "Myungil Kang and Lee, {Jong Soo} and Sim, {Sung Kyu} and Byungdon Min and Kyoungah Cho and Hyunsuk Kim and Sung, {Man Young} and Sangsig Kim and Song, {Se Ahn} and Lee, {Moon Sook}",

note = "Funding Information: This work was supported by the Korean Ministry of Science and Technology as a part of the '03 Nuclear R&D Program, Grant No. M2-0363-00-0052, Grant No. R01-1999-000-00230-0, Grant No. R01-2002-000-00504-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and National R&D project for Nano Science and Technology.",

year = "2004",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2004.02.025",

language = "English",

volume = "466",

pages = "265--271",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires

AU - Kang, Myungil

AU - Lee, Jong Soo

AU - Sim, Sung Kyu

AU - Min, Byungdon

AU - Cho, Kyoungah

AU - Kim, Hyunsuk

AU - Sung, Man Young

AU - Kim, Sangsig

AU - Song, Se Ahn

AU - Lee, Moon Sook

N1 - Funding Information: This work was supported by the Korean Ministry of Science and Technology as a part of the '03 Nuclear R&D Program, Grant No. M2-0363-00-0052, Grant No. R01-1999-000-00230-0, Grant No. R01-2002-000-00504-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and National R&D project for Nano Science and Technology.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2 nm-thick Ga2O 3 layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al2O3 by atomic layer deposition technique. Our study suggests that the Al2O3-coating passivates some of surface states in the GaN nanowires.

AB - Structural and optical properties of as-synthesized, Ga2O 3-coated, and Al2O3-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH3 atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2 nm-thick Ga2O 3 layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al2O3 by atomic layer deposition technique. Our study suggests that the Al2O3-coating passivates some of surface states in the GaN nanowires.

KW - Coatings

KW - GaN nanowires

KW - Optical properties

KW - Oxidation

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