Structural defects in the growth of multiple periods of InAs quantum dots on a GaAs substrate

Hwack Joo Lee, Hyun Ryu, Jae Y. Leam, Sam K. Noh, Hyung G. Lee, Sahn Nahm

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16 Citations (Scopus)


Microstructural observations on 20 periods of InAs quantum dots on a GaAs substrate grown by molecular beam epitaxy system were carried out by using high resolution transmission electron microscopy. The spherical cap-shaped InAs quantum dots were formed in a self-organized fashion, dot over dot, along the growth direction. However, two types of anomalities were found in the growth of these superlattice structures. One is the stoppage of quantum dot formation after 4 or 5 layers have been deposited. The morphology of the quantum dots was rather flat and faceted and a black and white contrast layer has appeared in the dot structure. The other type was a volcano-like defect which was grown vertically along the growth direction with a size of about 120 nm in diameter and about 400 nm in spacing. Inside the defect, black and white contrast layers have been formed along the [110] direction at the bottom of the epilayer and then changed to the [111] direction as the growth continued to the top layer.

Original languageEnglish
Pages (from-to)18-24
Number of pages7
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 1997 Feb

Bibliographical note

Funding Information:
This work was supported by the Korean Ministry of Science and Technology through a project for the reinforcement of a new materials evaluation technique in 1995.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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