Structural dependence of the thermal resistance of trench-isolated bipolar transistors

J. S. Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman, S. Subbanna

Research output: Contribution to conferencePaperpeer-review

55 Citations (Scopus)


The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.

Original languageEnglish
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 2002 Sept 292002 Oct 1


Other2002 IEEE Biopolar/BicMOS and Technology Meeting
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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