Structural dependence of the thermal resistance of trench-isolated bipolar transistors

J. S. Rieh; J. Johnson; S. Furkay; D. Greenberg; G. Freeman; S. Subbanna

Structural dependence of the thermal resistance of trench-isolated bipolar transistors

J. S. Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman, S. Subbanna

Research output: Contribution to conference › Paper › peer-review

Abstract

The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.

Original language	English
Pages	100-103
Number of pages	4
Publication status	Published - 2002
Externally published	Yes
Event	2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 2002 Sept 29 → 2002 Oct 1

Other

Other	2002 IEEE Biopolar/BicMOS and Technology Meeting
Country/Territory	United States
City	Minneapolis
Period	02/9/29 → 02/10/1

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Structural dependence of the thermal resistance of trench-isolated bipolar transistors",

abstract = "The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.",

author = "Rieh, {J. S.} and J. Johnson and S. Furkay and D. Greenberg and G. Freeman and S. Subbanna",

year = "2002",

language = "English",

pages = "100--103",

note = "2002 IEEE Biopolar/BicMOS and Technology Meeting ; Conference date: 29-09-2002 Through 01-10-2002",

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TY - CONF

T1 - Structural dependence of the thermal resistance of trench-isolated bipolar transistors

AU - Rieh, J. S.

AU - Johnson, J.

AU - Furkay, S.

AU - Greenberg, D.

AU - Freeman, G.

AU - Subbanna, S.

PY - 2002

Y1 - 2002

N2 - The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.

AB - The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.

UR - http://www.scopus.com/inward/record.url?scp=0036442355&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036442355

SP - 100

EP - 103

T2 - 2002 IEEE Biopolar/BicMOS and Technology Meeting

Y2 - 29 September 2002 through 1 October 2002

ER -

Structural dependence of the thermal resistance of trench-isolated bipolar transistors

Abstract

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ASJC Scopus subject areas

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