Abstract
The effect of the structural variation of device on its thermal resistance was investigated for trench-isolated bipolar transistors. Devices with various number of emitter segments and inter-segment spacings and several different trench-to-emitter distances were fabricated and the thermal resistance was measured/compared. An analytical thermal model was also developed and provided a good prediction on the structural dependence of the thermal resistance, exhibiting a good agreement with the measurement. 2D thermal device simulation was performed to obtain detailed temperature distribution inside the devices.
| Original language | English |
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| Pages | 100-103 |
| Number of pages | 4 |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: 2002 Sept 29 → 2002 Oct 1 |
Other
| Other | 2002 IEEE Biopolar/BicMOS and Technology Meeting |
|---|---|
| Country/Territory | United States |
| City | Minneapolis |
| Period | 02/9/29 → 02/10/1 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering