Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells

Seunghun Lee; Kwang Sun Ji; Hyomin Park; Sung Ju Tark; Sungeun Park; Jeong Chul Lee; Won Mok Kim; Yoonmook Kang; Hae Seok Lee; Donghwan Kim

doi:10.1016/j.tsf.2015.05.025

Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells

Seunghun Lee
, Kwang Sun Ji
, Hyomin Park
, Sung Ju Tark
, Sungeun Park
, Jeong Chul Lee
, Won Mok Kim
, Yoonmook Kang
, Hae Seok Lee^*
, Donghwan Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated the structural, optical, and electrical properties of Zn-In-Sn-O (ZITO) films prepared by RF magnetron sputtering for silicon heterojunction solar cells. The effects of Zn addition on the properties of the as-grown films were examined. XRD patterns of the ZITO films deposited at room temperature showed a broad peak. The cross-sectional TEM image of ZITO films at low Zn levels exhibited a typical fine or nanostructure embedded in an amorphous phase. On the other hand, at higher Zn addition, the films exhibited a completely amorphous phase. The carrier concentration decreased with increasing Zn content. The lowest electrical resistivity of 5.5 × 10^-4 Ω cm was observed for a ZITO film with 4.83 Zn at.%. All ZITO films grown in this study showed transmittance of over 80% in the visible and near-infrared spectral range. The absorption was less than 5% in the visible region.

Original language	English
Pages (from-to)	233-237
Number of pages	5
Journal	Thin Solid Films
Volume	589
DOIs	https://doi.org/10.1016/j.tsf.2015.05.025
Publication status	Published - 2015 Aug 31

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development program ( No. 20124030200120 ) and by the New & Renewable Energy ( No. 20133010011770 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), grant funded by the Korea government, Ministry of Trade, Industry and Energy . Also, this work was supported by the Korea University grant.

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Magnetron sputtering
Silicon solar cell
Transparent conducting oxide
Zinc indium tin oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.05.025

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@article{4cfd0bdce59249c8ad4893538ef8e386,

title = "Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells",

abstract = "We investigated the structural, optical, and electrical properties of Zn-In-Sn-O (ZITO) films prepared by RF magnetron sputtering for silicon heterojunction solar cells. The effects of Zn addition on the properties of the as-grown films were examined. XRD patterns of the ZITO films deposited at room temperature showed a broad peak. The cross-sectional TEM image of ZITO films at low Zn levels exhibited a typical fine or nanostructure embedded in an amorphous phase. On the other hand, at higher Zn addition, the films exhibited a completely amorphous phase. The carrier concentration decreased with increasing Zn content. The lowest electrical resistivity of 5.5 × 10-4 Ω cm was observed for a ZITO film with 4.83 Zn at.\%. All ZITO films grown in this study showed transmittance of over 80\% in the visible and near-infrared spectral range. The absorption was less than 5\% in the visible region.",

keywords = "Magnetron sputtering, Silicon solar cell, Transparent conducting oxide, Zinc indium tin oxide",

author = "Seunghun Lee and Ji, \{Kwang Sun\} and Hyomin Park and Tark, \{Sung Ju\} and Sungeun Park and Lee, \{Jeong Chul\} and Kim, \{Won Mok\} and Yoonmook Kang and Lee, \{Hae Seok\} and Donghwan Kim",

note = "Funding Information: This work was supported by the Human Resources Development program ( No. 20124030200120 ) and by the New \& Renewable Energy ( No. 20133010011770 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), grant funded by the Korea government, Ministry of Trade, Industry and Energy . Also, this work was supported by the Korea University grant. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2015.05.025",

language = "English",

volume = "589",

pages = "233--237",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells

AU - Lee, Seunghun

AU - Ji, Kwang Sun

AU - Park, Hyomin

AU - Tark, Sung Ju

AU - Park, Sungeun

AU - Lee, Jeong Chul

AU - Kim, Won Mok

AU - Kang, Yoonmook

AU - Lee, Hae Seok

AU - Kim, Donghwan

N1 - Funding Information: This work was supported by the Human Resources Development program ( No. 20124030200120 ) and by the New & Renewable Energy ( No. 20133010011770 ) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), grant funded by the Korea government, Ministry of Trade, Industry and Energy . Also, this work was supported by the Korea University grant. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/8/31

Y1 - 2015/8/31

N2 - We investigated the structural, optical, and electrical properties of Zn-In-Sn-O (ZITO) films prepared by RF magnetron sputtering for silicon heterojunction solar cells. The effects of Zn addition on the properties of the as-grown films were examined. XRD patterns of the ZITO films deposited at room temperature showed a broad peak. The cross-sectional TEM image of ZITO films at low Zn levels exhibited a typical fine or nanostructure embedded in an amorphous phase. On the other hand, at higher Zn addition, the films exhibited a completely amorphous phase. The carrier concentration decreased with increasing Zn content. The lowest electrical resistivity of 5.5 × 10-4 Ω cm was observed for a ZITO film with 4.83 Zn at.%. All ZITO films grown in this study showed transmittance of over 80% in the visible and near-infrared spectral range. The absorption was less than 5% in the visible region.

AB - We investigated the structural, optical, and electrical properties of Zn-In-Sn-O (ZITO) films prepared by RF magnetron sputtering for silicon heterojunction solar cells. The effects of Zn addition on the properties of the as-grown films were examined. XRD patterns of the ZITO films deposited at room temperature showed a broad peak. The cross-sectional TEM image of ZITO films at low Zn levels exhibited a typical fine or nanostructure embedded in an amorphous phase. On the other hand, at higher Zn addition, the films exhibited a completely amorphous phase. The carrier concentration decreased with increasing Zn content. The lowest electrical resistivity of 5.5 × 10-4 Ω cm was observed for a ZITO film with 4.83 Zn at.%. All ZITO films grown in this study showed transmittance of over 80% in the visible and near-infrared spectral range. The absorption was less than 5% in the visible region.

KW - Magnetron sputtering

KW - Silicon solar cell

KW - Transparent conducting oxide

KW - Zinc indium tin oxide

UR - https://www.scopus.com/pages/publications/84940053372

U2 - 10.1016/j.tsf.2015.05.025

DO - 10.1016/j.tsf.2015.05.025

M3 - Article

AN - SCOPUS:84940053372

SN - 0040-6090

VL - 589

SP - 233

EP - 237

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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