TY - GEN
T1 - Structural features and microwave properties of Ba0.5Sr 0.5TiO3 films grown on sapphire substrates
AU - Cho, Kwang Hwan
AU - Ha, Jong Yoon
AU - Kang, Chong Yun
AU - Choi, Ji Won
AU - Lee, Young Pak
AU - Yoon, Seok Jin
PY - 2007
Y1 - 2007
N2 - The change in dielectric constant of ferroelectric materials as a function of electric field is the key to wide range of microwave application such as tunable filter, impedance matching network, and phase shifter, In this study, ferroelectric Ba0.5Sr0.5TiO3 (BST) films were grown on r-cut sapphire and polycrystalline sapphire (poly-sapphire) substrates by RF sputtering. The results of comprehensive structural diagnostics of the films are correlated with the dielectric constant and dielectric loss of a co-planar BST varactor, measured at a frequency range of 1-3 GHz. Textured BST films approximately 500 nm thick, grown on r-cut sapphire substrates, are characterized by high dielectric constant ≥ 650. However, polycrystalline BST films, grown on poly-sapphire substrates, are less strained, having dielectric constant range of 430-640.
AB - The change in dielectric constant of ferroelectric materials as a function of electric field is the key to wide range of microwave application such as tunable filter, impedance matching network, and phase shifter, In this study, ferroelectric Ba0.5Sr0.5TiO3 (BST) films were grown on r-cut sapphire and polycrystalline sapphire (poly-sapphire) substrates by RF sputtering. The results of comprehensive structural diagnostics of the films are correlated with the dielectric constant and dielectric loss of a co-planar BST varactor, measured at a frequency range of 1-3 GHz. Textured BST films approximately 500 nm thick, grown on r-cut sapphire substrates, are characterized by high dielectric constant ≥ 650. However, polycrystalline BST films, grown on poly-sapphire substrates, are less strained, having dielectric constant range of 430-640.
KW - Ferroelectric thin film
KW - Tunable microwave device
UR - http://www.scopus.com/inward/record.url?scp=38549104661&partnerID=8YFLogxK
U2 - 10.4028/3-908451-31-0.1829
DO - 10.4028/3-908451-31-0.1829
M3 - Conference contribution
AN - SCOPUS:38549104661
SN - 3908451310
SN - 9783908451310
T3 - Solid State Phenomena
SP - 1829
EP - 1832
BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PB - Trans Tech Publications Ltd
T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Y2 - 10 September 2006 through 14 September 2006
ER -