Abstract
Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation occurs in the GaAs1-xNx layer (x < 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase. Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation.
Original language | English |
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Article number | 79 |
Pages (from-to) | 900-906 |
Number of pages | 7 |
Journal | Journal of Electronic Materials |
Volume | 30 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2001 |
Externally published | Yes |
Keywords
- Atomic force microscopy (AFM)
- Doping
- GaAsN
- Metalorganic molecular beam epitaxy (MOMBE)
- Transmission electron microscopy (TEM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry